Table 1 Device characteristics of OLEDs with 1 and 2 as EL
and HTL
preferably as an electron blocker more than as a hole blocker
and charge recombination is thus confined to the Alq3 layer.
The device characteristics clearly demonstrate that the hole-
transporting ability of 1 and 2 with superior device performance
(maximum brightness and efficiency) is comparable to that of
an NPB-based device (Fig. 2, Table 1). Device IV having
compound 2 as HTL exhibited the best performance with a
high maximum brightness of 32270 cd mꢀ2 for green OLED at
11.4 V, a low turn-on voltage of 4.0 V, a maximum luminous
efficiency of 6.25 cd Aꢀ1 and a maximum external quantum
efficiency of 0.30%.
Device EL/HTL Von lem Lc
Jd
Ze
EQEf CIEg
a
b
I
1
2
1
4.5 457
4.6 465
2621 436 1.28 0.26 0.14,0.13
4586 512 1.65 0.34 0.15,0.16
II
III
IV
V
4.4 515 18 035 891 4.13 0.20 0.27,0.52
4.0 509 32 270 894 6.25 0.30 0.26,0.49
3.6 515 30 044 1362 4.42 0.22 0.25,0.48
2
NPB
a
b
Turn-on voltage (V) at a luminance of 10 cd mꢀ2
.
Emission
maximum. Maximum luminance (cd mꢀ2) at the applied voltage (V).
d
c
Current density (mA cmꢀ2). Luminance efficiency (cd
g
External quantum efficiency (%). CIE coordinates (x, y).
A
ꢀ1).
e
f
New anthracene derivatives with the combined characteristics
of deep blue light-emitting and hole-transporting materials have
been developed. These materials showed deep blue emission with
high emission quantum efficiency over 73% in the solution and
strong luminance in the solid state and were electrochemically
and thermally stable with degradation temperature well above
400 1C. Non-doped blue OLEDs with a maximum efficiency of
1.65 cd Aꢀ1 and CIE coordinate of (0.15, 0.16), and green
OLEDs with a maximum efficiency of 6.25 cd Aꢀ1 and CIE
coordinate of (0.26, 0.49), were achieved. Their ability as HTL
for green OLEDs in terms of device performance and thermal
properties was greater than the common hole-transporter NPB.
This work was financially supported by the Thailand Research
Fund (MRU5080052). We acknowledge the scholarship support
from Center for Innovation in Chemistry (PERCH-CIC), Ubon
Ratchathani University, and the Office of the Higher Education
Commission, Thailand.
among good non-doped deep blue emitters reported. The
trend in device luminous efficiencies matches very well with
the observed decrease in PL quantum efficiencies (FF) on
going from 2 to 1. The efficiency of an OLED depends both
on the balance of electrons and holes and the FF of the
emitter.11 Analysis of band energy diagrams of all devices also
revealed that there is a barrier around 0.32 eV for holes to
migrate from the PEDOT:PSS/EL interface suggesting that a
migration of hole at that interface is more effective in both
devices and the charge efficiently recombines in the EL resulting
in good device performance.
As HOMO levels of these materials (5.32 eV) match
well with the work function of the ITO (4.8 eV) electrode,
they may potentially serve as hole-transporting material
(HTM). To test this hypothesis, double-layer green OLEDs
(devices III, IV) with the structure of ITO/PEDOT:PSS/
HTL(40 nm)/Alq3(50 nm)/LiF(0.5 nm):Al(150 nm) were fabri-
cated, where these materials were used as the hole-transporting
layer (HTL) and tris-(8-hydroxyquinoline) aluminium (Alq3)
as the green light-emitting and electron-transporting layers
(ETL). The reference device (device V) with the same structure
based on commonly used commercial HTM, N,N0-diphenyl-
N,N0-bis(1-naphthyl)-(1,10-biphenyl)-4,40-diamine (NPB), as
HTL was made for comparison. On comparison of HOMO
and LUMO levels of layers for the devices, it was found that
there is a barrier around 0.32 eV for holes to migrate from the
HTL layer to the Alq3 layer, while that for electrons to
transport from the Alq3 to the HTL layer is about 0.57 eV.
According to this band diagram and device configuration,
Notes and references
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both compounds can transport
a hole injected from
ITO/PEDOT:PSS to the Alq3 emitting layer. Under applied
voltage, all devices exhibited a bright green emission with
peaks centered at 509–515 nm and CIE coordinates of
(0.25–0.27, 0.48–0.52). The EL spectra match with the PL
spectrum of Alq3 and also other reported EL spectra of Alq3
devices (Fig. 1).12 No emission at the longer wavelength,
owing to exciplex species formed at the interface of HTL
and ETL materials, which has often occurred in the devices
fabricated from HTL with a planar molecular structure, was
detected.13 In our case, the formation of exciplex species could
be prevented by the bulky nature of both the anthracene core
and triphenylamine at the periphery of the molecules. From
these results and in view of the fact that barrier for electron-
migration at the Alq3/HTL interface (0.57 eV) is nearly twice
higher than those for hole-migration at the HTL/Alq3 interface
(0.32 eV), 1 and 2 act only as HTM and Alq3 would act
c
7124 Chem. Commun., 2011, 47, 7122–7124
This journal is The Royal Society of Chemistry 2011