Table 2 EL performance of the host materials TPhP, TNaP and
TPyP
Notes and references
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b
c
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EQEa
Zc
Zp
Lmax
Von(V)e
CIE(x,y)f
A
B
C
D
5.2
5.6
6.4
7.7
5.0
6.5
7.7
9.8
3.2
4.6
5.1
5.4
8641
14912
27762
44750
3.8
3.6
3.6
3.5
0.14, 0.10
0.14, 0.13
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0.14, 0.14
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at 8 V.
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Recorded
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Fig. 2 EQE and current efficiency versus luminance of devices A–D.
of TPhP- and TNaP- based devices A and B showed relatively
high efficiency roll-off. But surprisingly, the efficiency of the
TPyP-based device C increases gradually as the luminance
increases from 10 to 10000 cd mꢀ2. The performance of the
device C-based structure can be further improved by inserting
a thin layer of MoO3 (2 nm) between ITO and NPB.21 Device
D thus fabricated shows an EQE and current efficiency as high
as 7.7% and 9.8 cd Aꢀ1, respectively. The operational lifetime
of device C was tested under a luminance of 500 cd mꢀ2. The
T
58 (58% of initial luminance) of device C was about 20 h. The
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lifetime T67 (67% of initial luminance) of device D was
improved drastically to 291 h under a higher luminance of
1000 cd mꢀ2 as shown in the ESI.w It is known that the use of
BCP as an electron-transporting layer displays typically a low
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electron transporting materials for the present devices in order
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In summary, we have successfully synthesized three phenan-
threne derivatives TPhP, TNaP and TPyP that show excellent
photoluminescent and thermal properties for electrolumines-
cent (EL) applications. In particular, the pyrene-substituted
TPyP-based devices have achieved one of the highest external
quantum efficiencies ever reported and excellent stability with
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We thank the Ministry of Economy (98-EC-17-A-08-S1-042)
and the National Science Council of the Republic of China
(NSC-99-2119-M-007-010) for support of this research and the
National Center for High-Performance Computing (Account
number: u32chc04) of the Republic of China for providing
computing time.
c
This journal is The Royal Society of Chemistry 2011
Chem. Commun., 2011, 47, 8865–8867 8867