transporting property of the BHJ layer. The similar absorption
and hole mobilities of PIDT–FBT and PIDT–BT combined
with similar morphology, as revealed by atomic force microscopy
(AFM), resulted in similar Jsc and FF. Thus, the improved
performance of the PIDT–FBT device should come mainly
from the increased Voc. In the PIDT–DFBT device, the low
FF may be due to the significantly decreased hole-mobility.
Similarly, the comparable PCE of the PIDT–DFBT device is
mainly due to the very high Voc of 0.92 V.
Fig. 4 J–V (a) and EQE (b) curves of polymer/PC71BM devices.
In conclusion, fluoro-substituted PIDT–FBT and
PIDT–DFBT were synthesized and used as the donor polymer
in PSCs. PIDT–FBT and PIDT–DFBT showed deep HOMO
energy levels of À5.38 eV and À5.48 eV, respectively, after
introducing the electron-withdrawing fluorine atoms onto the
BT unit. The PCEs of PIDT–FBT and PIDT–DFBT devices
reached 5.40% and 5.10%, with high Vocs of 0.86 V and 0.92 V,
respectively, compared with the PCE of 5.02% and Voc of
0.81 V in the PIDT–BT device. The high Voc and improved
device performance make PIDT–FBT and PIDT–DFBT
promising candidates for high-performance PSCs.
same conditions for comparison. Fig. 4a displays the J–V
curves of the devices that were measured under 100 mW cmÀ2
illumination (AM 1.5G). The PIDT–FBT/PC71BM device
showed a Voc of 0.86 V, a Jsc of 11.23 mA cmÀ2 and a FF
of 56%, leading to an overall PCE of 5.40%. Under the same
conditions, however, the PIDT–BT device gave a PCE of
5.02%, with a Voc of 0.81 V, a Jsc of 11.23 mA cmÀ2, and a
FF of 55%. An increase of 0.05 V in the Voc of the PIDT–FBT
device was found while comparing to that of the PIDT–BT
device. It is interesting that both devices showed very similar
Jsc and FF, therefore, the increased PCE of the PIDT–FBT
device over the PIDT–BT device was mainly attributed to the
increase of Voc, benefiting from the deeper HOMO energy
level of PIDT–FBT. As indicated above, PIDT–DFBT has
the deepest HOMO energy level, it is expected that a further
increase of Voc would be achieved. As expected, the Voc of the
PIDT–DFBT/PC71BM device reached 0.92 V, 0.12 V enhance-
ments compared to that of the PIDT–BT device. Combining a
The authors thank the support from NSF (DMR-0120967),
DOE (DEFC3608GO18024/A000), AFOSR (FA9550-09-1-0426),
ONR (N00014-11-1-0300), and the World Class University
program through National Research Foundation of Korea
(R31-21410035). A. K. Y. J. thanks the Boeing Foundation for
support. S. C. C. thanks the National Science Council of
Taiwan (NSC98-2917-I-009-112) for support.
J
sc of 10.87 mA cmÀ2 and a FF of 51%, the overall PCE of the
Notes and references
PIDT–DFBT device was 5.10%, which is slightly higher than
the PIDT–BT device. The comparable performance was also
attributed to the significant enhancement of Voc which was offset
by the loss in Jsc and FF in comparison with the PIDT–BT
device. The results clearly indicate that increasing the Voc in
PSC by fine tuning the HOMO energy level of the polymer is
an effective way to enhance the overall device performance.
The external quantum efficiency (EQE) spectra of the
devices were studied to further verify the photoresponse. As
shown in Fig. 4b, all devices showed an efficient photoresponse
in the range of 340 nm to 750 nm. The highest EQE value of
the devices reached B70% in PIDT–BT and PIDT–FBT
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The almost overlapped EQE curves of PIDT–FBT and
PIDT–BT devices are very consistent with the similarities in
the measured Jsc and FF in both devices. In the PIDT–DFBT
device, the low EQE value between 350 nm to 550 nm coming
from the PC71BM may be one of the main factors for the
measured low Jsc.
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and PIDT–DFBT were calculated to be 4.69 Â 10À2, 3.38 Â 10À2
,
and 2.88 Â 10À3 cm2 vÀ1
s
À1, respectively. It is known that
both Jsc and FF are partially dependent on the charge
c
11028 Chem. Commun., 2011, 47, 11026–11028
This journal is The Royal Society of Chemistry 2011