Angewandte
Chemie
DOI: 10.1002/anie.201206301
Molecular Electronics
Quantum Soldering of Individual Quantum Dots**
Xavier Roy, Christine L. Schenck, Seokhoon Ahn, Roger A. Lalancette, Latha Venkataraman,*
Colin Nuckolls,* and Michael L. Steigerwald*
Here we describe a precise method to make electrical contact
to an individual quantum dot (QD). This supramolecular
construction connects the QD to its macroscopic environ-
ment, yet it does not disturb the nanoscopic quantum
mechanical confinement of the excitons in these small
solids. Quantum mechanical confinement has given rise to
the hallmark optical properties of QDs,[1–3] but it has been of
only limited use in electronic and opto-electronic applica-
tions[3] of QDs because of three interrelated problems: 1) the
lack of knowledge of how to make innocent electrical contact
to QDs; 2) the challenge of synthesizing atomically precise
QDs; and 3) not having the methods to efficiently wire
individual QDs in electrical devices. Robust electrical contact
to the core of QDs is essential in the development of QD-
based electronic devices[3–8] and for the extraction of hot
electrons[9] and the separation of charges from multiple
exciton states[10,11] in QD solar cells but yet it has only been
thoroughly explored in the context of thin films and bulk
samples of QDs[12–17] where function cannot be related to the
poorly characterized structure and quantum confinement is
compromised at best. Here we synthesize, for the first time,
a molecularly discrete, crystallographically defined, electron-
rich, metal chalcogenide cluster, Co6Se8,[18] that is capped with
conjugated, molecular connectors that can couple electroni-
cally to nanoscale electrodes. We show that these connectors
provide a well-defined electronic pathway for the transport of
charge carriers through a single QD. We measure the
conductance of individual QDs using a scanning tunneling
microscope based break-junction (STM-BJ) technique[19–21]
and compare our results with density functional theory.
Finally, we show that we can control the electronic
coupling between the core of the QD and the conducting
backbone of the connector by varying the connector structure
allowing us to differentiate between conductive molecular
connectors and insulating ones. These results establish
quantum mechanical design rules for controlling the elec-
tronic coupling to a QD for the creation of QD-based
electrical circuits.
The solid-state compound CoSe is an infrared bandgap
semiconductor.[22] We synthesized a series of atomically
precise cobalt selenide quantum dots[18,23,24] decorated with
different molecular connectors (L2–L5). Connectors L2–L4
have a phosphine end that coordinates to the cobalt atom in
the cluster and a thiomethyl end that is aurophilic. Connector
L5 lacks a thiomethyl group and serves as a control. We
selected this family of compounds based on the parent QD
Co6Se8(PEt3)6 (1) (Figure 1b) because its electron-rich core is
a reservoir of carriers, and its synthesis is amenable to a broad
range of phosphines. Single-crystal X-ray diffraction
(SCXRD) shows that the Co6Se8 core of the clusters, 1–5,
are isostructural (Figure 2), forming an octahedron of Co
atoms concentric with a cube of Se atoms. Cluster 4 packs
with its six molecular connectors grouped into two diametri-
cally opposed groups of three, resulting in an ideal conforma-
tion for bridging a linear gap between two electrodes, as
illustrated in Figure 1a.
[*] Dr. X. Roy, C. L. Schenck, Dr. S. Ahn, Prof. C. Nuckolls,
Dr. M. L. Steigerwald
Department of Chemistry, Columbia University
New York, NY 10027 (USA)
E-mail: cn37@columbia.edu
Prof. R. A. Lalancette
Department of Chemistry, Rutgers State University
Newark, NJ 07102 (USA)
We measured the conductance of both the individual QDs
2–5, and the free connectors, L2–L5 using a scanning tunnel-
ing microscope based break-junction (STM-BJ) technique.[19]
STM-BJ measurements use a gold tip and gold substrate to
repeatedly form and break gold point contacts in solutions of
the target compounds in 1,2,4-trichlorobenzene as solvent.
Clusters 2–4 can bind to the Au electrodes through thiomethyl
groups[25] whereas 5, which lacks thiomethyl groups, cannot.
The conductance across the Au gap is measured versus the tip/
substrate separation at an applied voltage of 500 and 750 mV
for L2–L5 and 2–5, respectively. In the inset of Figure 3a and
b, we show sample traces measured for 2, 4, L2, and L4. These
conductance traces show plateaus with lengths and conduc-
tance that characterize each compound, indicating that each
forms junctions.
Prof. L. Venkataraman
Department of Applied Physics and Applied Mathematics
Columbia University, New York, NY 10027 (USA)
E-mail: lv2117@columbia.edu
[**] This work was supported primarily through the Center for Re-
Defining Photovoltaic Efficiency Through Molecular-Scale Control,
an Energy Frontier Research Center (EFRC) funded by the U.S.
Department of Energy (DOE), Office of Science, Office of Basic
Energy Sciences under award number DE-SC0001085. L.V. thanks
the Packard Foundation for support. X.R. thanks the Natural
Sciences and Engineering Research Council of Canada for a post-
doctoral fellowship. C.L.S. is supported by the National Science
Foundation Graduate Research Fellowship under award number
DGE-1144155. We thank Brian Capozzi for help with the STM-BJ
measurements.
We created one-dimensional (1D) conductance and two-
dimensional (2D) conductance–displacement histograms
from the conductance traces.[21] Figure 3a and b show 1D
Supporting information for this article is available on the WWW
Angew. Chem. Int. Ed. 2012, 51, 12473 –12476
ꢀ 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
12473