
Organometallics p. 2177 - 2187 (1995)
Update date:2022-08-04
Topics:
Bronk, Brian S.
Protasiewicz, John D.
Pence, Laura E.
Lippard, Stephen J.
The [V(CO)2(dmpe)2]- anion reacts with Et3OBF4 and EtOTf to afford the unexpected product of formal C-alkylation, [V(η2-C(O)Et)(CO)(dmpe)2], which has been structurally characterized by X-ray crystallography (space group Pna21, a = 12.917(2) A?, b = 12.335(2) A?, c = 14.331(2) A?, V = 2283.4(5) A?3). The formation of species derived by O-acylation of the CO ligands in the [Ta(CO)2(dmpe)2]- and [Ta(CO)2(depe)2]- anions was indirectly established by isolation and characterization of products in which two CO ligands had coupled to form acetylene complexes. Addition of 2 equiv of acetyl chloride to Na[Ta(CO)2(dmpe)2] or Na[Ta(CO)2(depe)2] yielded the acetylene complexes [Ta(AcOC≡COAc)(dmpe or depe)2Cl]. The structure of the dmpe derivative was confirmed in a single-crystal X-ray determination (space group C2, a = 14.964(2) A?, b = 11.960(2) A?, c = 31.710(5) A?, β = 102.77(1)°, V = 5535(1) A?3). Additional proof of direct alkylation at terminal CO ligands was provided by isolation of mixed siloxy/alkoxyacetylene coupled products [M(R′3SiOC≡COR)(dmpe)2X] (R = Et, Ac, CO2Me; R′3Si = tBuPh2Si, iPr3Si) and [M(R′3SiOC≡COR)(depe)2X] (R = Et, Ac; R′3Si = tBuPh2Si, iPr3Si, Me3Si) from reactions of the siloxycarbyne precursors [M(COSiR′3)-(CO)(dmpe)2] and [M(COSiR′3)(CO)(depe)2] (M = Nb, Ta) with carbon-based electrophiles. The proper choice of carbon-based electrophile and reaction conditions is crucial in order to avoid oxidation of these low-valent metal complexes to [M(CO)2(dmpe)2X], which can occur competitively or exclusively.
Taizhou KEDE Chemical.Co.,Ltd.
Contact:86-576-84613060
Address:Jiangkou Chemical Zoon
Nanjing Fayekong Chemcial Co.,Ltd(expird)
Contact:86-25-58813444
Address:Rm 1503, Unit 1, Building 5, Zijinnanyuan, Nanjing, Jiangsu, China
Ji'an Hairui Natural Plant Co. Ltd.
Contact:0796-8105528
Address:Meilin industry park, Qingyuan district Ji'an City, Jiangxi Province
Contact:+86-21-38228826
Address:Room 505 Building 2, No 3377 Kangxin Highway, Shanghai, Republic China
Jiande City Silibase Silicone New Material Manufacture Co., Ltd.
Contact:15967177856
Address:Genglou Industrial Development Area
Doi:10.1021/ja01495a022
(1960)Doi:10.1021/jo980043m
(1998)Doi:10.1021/ja01857a054
(1941)Doi:10.1107/S0108270194009078
(1995)Doi:10.1002/cber.19671000217
(1967)Doi:10.1021/ja01619a044
(1955)