organic compounds
Table 2
Hydrogen-bonding and short-contact geometry (A, ) for (I).
Table 4
Hydrogen-bonding and short-contact geometry (A, ) for (II).
ꢀ
ꢀ
Ê
Ê
DÐHÁ Á ÁA
DÐH
HÁ Á ÁA
DÁ Á ÁA
DÐHÁ Á ÁA
DÐHÁ Á ÁA
DÐH
HÁ Á ÁA
DÁ Á ÁA
DÐHÁ Á ÁA
C6ÐH6Á Á ÁO3
C8ÐH8Á Á ÁO1
O3ÐH3Á Á ÁO1i
0.93
0.98
0.82
2.32
2.10
1.87
2.665 (2)
2.895 (2)
2.680 (2)
102
138
172
C6ÐH6Á Á ÁO3
C8ÐH8Á Á ÁO1
C16ÐH16Á Á ÁO4
O3ÐH3Á Á ÁO1i
0.93
0.98
0.93
0.82
2.36
2.15
2.50
1.83
2.695 (3)
2.917 (3)
2.887 (3)
2.652 (3)
101
134
105
175
Symmetry code: (i) 1 x; y; z.
Symmetry code: (i) 1 x; 1 y; 1 z.
For compound (I), data collection: SMART (Siemens, 1996); cell
re®nement: SAINT (Siemens, 1996); data reduction: SAINT. For
compound (II), data collection: CAD-4 Software (Enraf±Nonius,
1989); cell re®nement: CAD-4 Software; data reduction: SDP (Frenz,
1989). For both compounds, program(s) used to solve structure:
SHELXS97 (Sheldrick, 1997); program(s) used to re®ne structure:
SHELXL97 (Sheldrick, 1997); molecular graphics: ZORTEP
(Zsolnai, 1997); software used to prepare material for publication:
SHELX97 and PARST (Nardelli, 1995).
Compound (II)
Crystal data
C16H16O4S
Mr = 304.35
Triclinic, P1
a = 7.4805 (10) A
Ê
b = 7.5125 (9) A
Z = 2
Dx = 1.390 Mg m
Mo Kꢁ radiation
3
Ê
Cell parameters from 25
re¯ections
c = 14.4853 (18) A
ꢂ = 2.8±25.0ꢀ
ꢃ = 0.24 mm
T = 293 (2) K
Ê
1
ꢁ = 94.634 (9)ꢀ
ꢀ = 91.807 (1)ꢀ
ꢆ = 116.020 (8)ꢀ
KSS thanks UGC, India, for the award of an FIP fellowship
for 2001±2002. DV thanks DST, India. SSSR thanks Universiti
Sains Malaysia for a visiting Postdoctoral Research Fellowship
and HKF would like to thank the Malaysian Government and
Universiti Sains Malaysia for research grant R&D No. 190-
9609-2801. The authors also thank Professor P. C. Srinivasan
for providing the samples for X-ray study.
Block, colourless
0.40 Â 0.30 Â 0.26 mm
3
Ê
V = 727.09 (16) A
Data collection
Enraf±Nonius CAD-4
diffractometer
w/2ꢂ scans
2625 measured re¯ections
2518 independent re¯ections
2004 re¯ections with I > 2ꢄ(I)
Rint = 0.016
ꢂ
max = 25ꢀ
h = 8 ! 8
k = 8 ! 8
l = 0 ! 17
3 standard re¯ections
frequency: 300 min
intensity decay: 1%
Supplementary data for this paper are available from the IUCr electronic
archives (Reference: NA1557). Services for accessing these data are
described at the back of the journal.
Re®nement
Re®nement on F2
R[F2 > 2ꢄ(F2)] = 0.040
wR(F2) = 0.107
S = 1.01
2518 re¯ections
w = 1/[ꢄ2(Fo2) + (0.0549P)2
+ 0.1743P]
References
where P = (Fo2 + 2Fc2)/3
(Á/ꢄ)max < 0.001
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Int. Ed. Engl. 34, 1555±1573.
3
Ê
Áꢅmax = 0.28 e A
3
Ê
0.19 e A
192 parameters
H-atom parameters constrained
Áꢅmin
=
Bocelli, G. & Rizzoli, C. (1990). Acta Cryst. C46, 2259±2260.
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Dupont, L., Lamotte, J., Campsteyn, H. & Vermeire, M. (1978). Acta Cryst.
B34, 1304±1310.
Ê
All H atoms were ®xed geometrically, with CÐH = 0.93±0.98 A
Ê
and OÐH = 0.82 A, and allowed to ride on the corresponding parent
atoms, with Uiso(H) = 1.2Ueq(C) or 1.5Ueq(O).
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Nonius, Delft, The Netherlands.
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Table 3
Selected geometric parameters (A, ) for (II).
ꢀ
Ê
S1ÐO2
S1ÐO4
S1ÐC11
1.437 (2)
1.438 (2)
1.767 (2)
O1ÐC7
O3ÐC7
1.220 (3)
1.311 (2)
O4ÐS1ÐC11
O2ÐS1ÐC8
O4ÐS1ÐC8
O1ÐC7ÐO3
108.1 (1)
106.8 (1)
108.8 (1)
121.8 (2)
O1ÐC7ÐC1
O3ÐC7ÐC1
C2ÐC8ÐS1
C9ÐC8ÐS1
124.5 (2)
113.7 (2)
105.6 (1)
111.9 (1)
O2ÐS1ÐC8ÐC2
O4ÐS1ÐC8ÐC2
C11ÐS1ÐC8ÐC2
O2ÐS1ÐC8ÐC9
O4ÐS1ÐC8ÐC9
C11ÐS1ÐC8ÐC9
O2ÐS1ÐC11ÐC12
62.6 (2)
66.3 (2)
178.1 (1)
170.6 (2)
60.5 (2)
55.1 (2)
48.9 (2)
O4ÐS1ÐC11ÐC12
C8ÐS1ÐC11ÐC12
O2ÐS1ÐC11ÐC16
O4ÐS1ÐC11ÐC16
C8ÐS1ÐC11ÐC16
S1ÐC11ÐC12ÐC13
S1ÐC11ÐC16ÐC15
178.7 (2)
65.2 (2)
131.2 (2)
1.4 (2)
114.7 (2)
179.6 (2)
178.3 (2)
È
Gottingen, Germany.
Siemens (1996). SMART and SAINT. Versions 4.0. Siemens Analytical X-ray
Instruments Inc., Madison, Wisconsin, USA.
Zsolnai, L. (1997). ZORTEP. University of Heidelberg, Germany.
ꢁ
Acta Cryst. (2002). C58, o257±o259
K. Sethu Sankar et al. C15H14O4S and C16H16O4S o259