Angewandte
Chemie
dimensional offset p-stacks (Figure 2b). In each stack, two
parallel neighbors have roughly two rings overlapped with
a p-to-p distance of 3.47 ꢀ. The non-overlapped space above
and below the pentacyclic backbone is occupied by the
triisopropylsilyl groups of neighboring stacks. The fact that 1a
forms one-dimensional p-stacks rather than two-dimensional
p-stacks is likely related to the substitution position of bulky
triisopropylsilyl groups. With a smaller substituting group, 1b
exhibits a special herringbone-type arrangement (shown in
Figure 2c), where one molecule of 1b has the edge of its
termini contacted with the p-face of a neighboring molecule.
This packing motif involves much less intermolecular overlap
of p-orbitals than the established herringbone packing of
pentacene.
oxidized than the benzene ring in 2 and the five-membered
ring in 3a by forming an aromatic cycloheptatrienyl cation.
To test the semiconductor properties of 1a–c, thin-film
transistors of 1a–c were fabricated by dip-coating or drop-
casting a solution onto an oxidized silicon substrate. High-
quality films of 1a were formed by immersing a SiO2/Si
substrate in a solution of 1a (2 mgmLÀ1) in a solvent mixture
of dichloromethane and acetone (1:1 by volume) and then
pulling it up with a constant speed of 5.4 mmsÀ1. The films of
1a deposited on the SiO2 surface were composed of aligned
crystalline fibers, as shown in the polarized-light micrograph
of Figure 4a. X-ray diffraction patterns from the films of 1a
(Supporting Information) exhibited one peak at a d-spacing
of 11.19 ꢀ (2q = 7.908) and three higher-order peaks at d-
spacings of 5.59 ꢀ, 3.72 ꢀ, and 2.79 ꢀ. These peaks do not
correspond to any diffractions derived from the single-crystal
structure of 1a, and thus indicate a polymorph different from
Molecules 1a–c are deep purple and nonfluorescent in
solution when excited with UV light, and exhibit almost
identical UV/Vis absorption spectra. The UV/Vis absorption
spectra of compounds 1a and 2 are shown in Figure 3 for
comparison. In the visible-light region, 1a exhibits more
Figure 4. a) Reflection polarized-light micrograph of a film of 1a as
dip-coated on SiO2 at a substrate temperature of room temperature.
b) Drain current (IDS) versus gate voltage (VG) with drain voltage (VDS
)
Figure 3. UV/Vis absorption spectra of 0.05 mm solutions of 1a and 2
in dichloromethane.
at À50 V for the best-performing OTFT of 1a measured in air with an
active channel of W=1 mm and L=50 mm.
intense absorption than 2. The longest wavelength absorption
maxima of 1a occurs at l = 587 nm, which is blue-shifted by
55 nm relative to that of 2. To determine the energy levels of
the highest occupied molecular orbital (HOMO) and the
lowest unoccupied molecular orbital (LUMO), the redox
behavior of compound 1a in solution in dichloromethane was
investigated with cyclic voltammetry. The cyclic voltammo-
gram of 1a (Supporting Information) exhibited a reversible
reduction wave and a reversible oxidation wave with half-
wave potentials of À1.66 V and 0.12 V versus ferrocene/
ferrocenium, respectively. Based on these electrochemical
potentials, the HOMO and LUMO energy levels of 1a are
estimated as À4.92 eV and À3.14 eV, respectively.[17] These
energy levels lead to a HOMO–LUMO energy gap of 1.78 eV,
which is in good agreement with the absorption edge at
approximately l = 649 nm (1.91 eV). In comparison, the
HOMO and LUMO energy levels of 2, also estimated from
electrochemical potentials, are À5.17 eV and À3.30 eV,
respectively,[18] and the HOMO and LUMO energy levels of
3a are À5.88 eV and À4.00 eV, respectively.[10b] The higher
HOMO and LUMO energy levels of 1a correspond to the
fact that the seven-membered ring in 1a is more easily
its bulk crystals. The device fabrication was completed by
depositing a layer of gold on the film of 1a through a shadow
mask to form top-contact source and drain electrodes. As
measured in air from these devices, 1a functioned as a p-type
semiconductor with a field-effect mobility in the range of
0.19–0.76 cm2 VÀ1 sÀ1. The highest mobility was extracted from
the transfer I–V curves shown in Figure 4b using the
equation: IDS = (mWCi/2L)(VGÀVT)2, where IDS is the drain
current, m is field-effect mobility, Ci is the capacitance per unit
area (11 nFcmÀ2) for the 300 nm-thick dielectric layer of SiO2,
W is the channel width, L is the channel length, and VG and VT
are the gate and threshold voltage, respectively. It was found
that the mobility of 0.76 cm2 VÀ1 sÀ1 decreased to
0.57 cm2 VÀ1 sÀ1 and 0.39 cm2 VÀ1 sÀ1 after the device was
stored in air for one week and one month, respectively.
Such degradation of mobility can be attributed to the fact that
the thin-film phase gradually changes to the more stable bulk-
crystal phase. This is shown by the X-ray diffractions from the
film stored for one week (Supporting Information), which
indicate the existence of both the thin-film phase and the
bulk-crystal phase of 1a. The thin-film transistors of 1b and
1c exhibited field-effect mobilities of 6 ꢁ 10À4 and 5 ꢁ
10À5 cm2 VÀ1 sÀ1, respectively, for holes. The low mobility of
Angew. Chem. Int. Ed. 2014, 53, 1 – 6
ꢀ 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
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