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A layer of BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthro-
line) to serve as a hole blocker was deposited between the
emitting layer and cathode made of Mg : Ag (10 : 1) with a
thickness of 80 nm. The emissive area of the devices was
5 mm 6 6 mm. EL spectrum and brightness–current–voltage
characteristics of the device were measured with a PR650
Spectra Scan at room temperature and atmosphere. The
˚
device reported here had the configuration ITO/NPB(500 A)/
˚
CBP : Eu(TCPD)3(Phen)(2.5 wt %)(600 A)/BCP(500 A)/Mg :
˚
˚
Ag(800 A).
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Acknowledgements
This work was partially supported by NSFC/China (Project
No.: 20106006, 90401026), Education Committee of Shanghai
and Scientific Committee of Shanghai (04dz05102).
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