C O M M U N I C A T I O N S
By going from alkenyl terminated wafers (7-octenyl: d ) 2.08
nm, ellipsometry; 10-undecenyl: d ) 2.10 nm, XPS) to the addition
products, a significant increase of SAM thickness was measured
(E, d ) 2.70, ellipsometry; J, d ) 2.95 nm, XPS; L, d ) 3.62 nm,
XPS; see SI). This indicates that the added functional groups are
probably not buried within the monolayer as also supported by the
changes of the CAs.
In conclusion we reported first radical C-C-bond forming
reactions at SAMs. These reactions can be conducted under neutral
conditions and many functional groups are tolerated. This is a major
advantage over most of the carbon-heteroatom bond-forming
processes at SAMs which are ionic reactions and require often
protecting group strategies. We believe that the radical surface
chemistry will become an important alternative to the established
ionic chemistry for chemical surface modification. The new method
can also be used for the immobilization of biologically interesting
molecules.
Acknowledgment. We thank the Fonds der Chemischen In-
dustrie for a stipend (K.O.S.) and the Deutsche Forschungsgemein-
schaft (STU 280/5-1) for supporting our work. Dr. H. Wormeester,
MESA+ Research Institute (Enschede, NL) is acknowledged for
performing ellipsometry. Wacker Siltronics AG is acknowledged
for donation of Si wafers. An anonymous referee is acknowledged
for helpful comments. This work is dedicated to Professor Hans J.
Scha¨fer on the occasion of his 70th birthday.
Figure 2. Carboaminoxylation using bulky alkoxyamines.
using alkoxyamines derived from sterically highly hindered nitrox-
ides are far more efficient as compared to the TEMPO-mediated
processes.4c This is also true for the surface radical chemistry as
reaction with the bulky alkoxyamine 1 at 125 °C is completed within
2 h (ClCH2CH2Cl, 1 M, method A, CA ) 81 ( 3°; wafer E).8,9
Surface reaction using 1 can even be achieved at 90 °C (20 h, CA-
(adv) ) 77 ( 3°; wafer E, method B). With oily alkoxyamines,
radical chemistry at SAMs can be conducted by simply covering
the wafer with a film of the alkoxyamine and subsequent heating
without using any solvent (90 °C, 15 h, CA(adv) ) 74 ( 3°; wafer
F, method C). Using methods A and B wafers G-I were
successfully prepared showing that various functional groups can
readily be introduced. It is known that the alkyl chain length in
alkyl trialkoxysilanes influences SAM formation.1a,10 Therefore, 10-
undecenyl covered wafers were modified by radical carboaminoxyl-
ations providing wafers J-L. Generally larger contact angle
changes were observed upon C-C bond formation indicating that
a higher density of the functional groups at the surface is achieved
starting from longer and more densely packed alkene-terminated
wafers (see Figure 2).
To further study the surface chemistry, X-ray photoelectron
spectroscopy (XPS) was performed. SAM modification with
TEMPO-alkoxyamines leading to wafers C and D was quantified
revealing that about 30% (wafer C) or 44% (wafer D) of the surface
bound alkenes underwent reaction (Figure 1). With bulkier
alkoxyamines, SAMs can be subjected to radical carboaminoxyl-
ation under milder conditions (see above). XPS results show that
under these conditions SAM modification proceeds more efficiently.
Hence, reaction with 1 leads to very high conversion with respect
to the surface bound octene (89%, wafer E, method A). Even with
sterically hindered alkoxyamines surface modification proceeds
smoothly under the described conditions (46%, wafer H, method
B; 69%, wafer I, method B; 40%, wafer K, method A). Also
fluorination was readily achieved (77%, method C; wafer L).
Analysis of the SAM thickness by ellipsometry and angle-
resolved XPS further supports the success of the surface reaction.
Supporting Information Available: Experimental procedures and
compound characterization data. This material is available free of charge
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