4500
Journal of the American Ceramic Society—Zhao et al.
Vol. 94, No. 12
3R. Paine and C. Narula, “Synthetic Routes to Boron Nitride,” Chem. Rev.,
90 [1] 73–91 (1990).
boron and nitrogen interstitials and the nitrogen vacancy
have low formation energy suggesting that they are likely to
occur in BN thin films.51 The vacancies introduce additional
states into the gap and alter the optical properties of BN
material.52 Hence, appearance of these two low-energy peaks
in the optical absorption spectrum of the samples is indica-
tive of existence of two kinds of defects, which is more likely
to be attributed to vacancies and carbon substitutions in BN
network.50
4K. Watanabe, T. Taniguchi, and H. Kanda, “Direct-bandgap Properties
and Evidence for Ultraviolet Lasing of Hexagonal Boron Nitride Single Crys-
tal,” Nat. Mater., 3 [6] 404–9 (2004).
5Y. Kubota, K. Watanabe, O. Tsuda, and T. Taniguchi, “Deep Ultraviolet
Light-emitting Hexagonal Boron Nitride Synthesized at Atmospheric
Pressure,” Science, 317 [5840] 932 (2007).
6Y. Chen, J. Zou, S. Campbell, and G. Le Caer, “Boron Nitride Nanotubes:
Pronounced Resistance to Oxidation,” Appl. Phys. Lett., 84, 2430 (2004).
7J. Lauret, R. Arenal, F. Ducastelle, A. Loiseau, M. Cau, B. Attal-Tretout,
E. Rosencher, and L. Goux-Capes, “Optical Transitions in Single-wall Boron
Nitride Nanotubes,” Phys. Rev. Lett., 94 [3] 37405 (2005).
Figures 7 and 8 show representative example of excitation
and emission spectra measured for the synthesized h-BN
nanoplates at room temperature. The excitation spectrum
contains seven UV peaks, which are divided into three sets
named A, B, and C. Excitation set B, which at 289 (4.29 eV),
301 (4.12 eV), and 313 (3.96 eV) nm, could be assigned to
the deep-level transitions of BOÀ ion from the ground state
(1∑+) to the first excited state (2∑+); excitation set A at
267 nm (4.64 eV) might be related to the second excited state
of BOÀ ion.53 It is still difficult to identify the origin of the
peaks of set C at 345 (3.59 eV), 362 (3.42 eV), and 380
(3.26 eV) nm. One possibility is that the excitations are
caused by B or N vacancy-type defect-trapped states.18,29 As
shown in Fig. 8, it displays intense emission between 400 and
475 nm, and tails off toward low energy, when excited at
313 nm, the maximum excitation. The broad emission band
is structured and composed of three peaks centered at 406
(3.05 eV), 430 (2.88 eV), and 459 (2.70 eV) nm, respectively.
The spacing among the three observed peaks is found regu-
lar. We therefore attribute the peaks at 430 (2.88 eV) and
459 (2.70 eV) nm to the phonon replicas of the band at
406 nm (3.05 eV), with respective 1 and 2 emitted phonons.
The plot of the energy of each peak against the number of
phonons is given in the inset of Fig. 8. The slope of the lin-
ear dependence is 0.17 eV (1370 cmÀ1) per phonon, which is
in good agreement with the B–N E2g vibrational mode pho-
non frequency (1369 cmÀ1) of the h-BN nanoplates measured
by Raman spectroscopy as shown in Fig. 4. The origin of
the emission band is probably due to the deep levels presum-
ably associated with O impurities, B, and N vacancies,54–57
and further investigation will be carried out in future work.
8N. Chopra, R. J. Luyken, K. Cherry, V. H. Crespi, M. L. Cohen, S. G.
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H. Yusa, “Nanotubes in Boron Nitride Laser Heated at High Pressure,” Appl.
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10T. Bartnitskaya, G. Oleinik, A. Pokropivnyi, and V. Pokropivnyi, “Syn-
thesis, Structure, and Formation Mechanism of Boron Nitride Nanotubes,”
JETP Lett., 69 [2] 163–8 (1999).
11Z. Gan, X. Ding, Z. Huang, X. Huang, C. Cheng, C. Tang, and S. Qi,
“Growth of Boron Nitride Nanotube Film in Situ,” Appl. Phys. A: Mater.
Sci. Process, 81 [3] 527–9 (2005).
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Boron Nitride Filaments,” J. Mater. Sci., 29 [6] 1575–80 (1994).
13K. Shelimov and M. Moskovits, “Composite Nanostructures Based on
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14O. Lourie, C. Jones, B. Bartlett, P. Gibbons, R. Ruoff, and W. Buhro,
“CVD Growth of Boron Nitride Nanotubes,” Chem. Mater., 12 [7] 1808–10
(2000).
15Y. Shimizu, Y. Moriyoshi, H. Tanaka, and S. Komatsu, “Boron Nitride
Nanotubes, Webs, and Coexisting Amorphous Phase Formed by the Plasma
Jet Method,” Appl. Phys. Lett., 75, 929 (1999).
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Nitride Nanotubes at Low Temperatures Uusing Reactive Ball Milling,”
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17C. Zhi, Y. Bando, C. Tang, D. Golberg, R. Xie, and T. Sekigushi, “Pho-
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18J. Wu, W. Han, W. Walukiewicz, J. Ager III, W. Shan, E. Haller, and
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and BxCyNz Nanotubes,” Nano Lett., 4 [4] 647–50 (2004).
19W. Han, H. Yu, C. Zhi, J. Wang, Z. Liu, T. Sekiguchi, and Y. Bandos,
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Nitride Nanoscale Cones: Ordered Stacking of 240° and 300° Disclinations,”
Phys. Rev. B., 61 [11] 7686–91 (2000).
21I. Narita, T. Oku, H. Tokoro, and K. Suganuma, “Synthesis of Co Nano-
capsules Coated with BN Layers by Annealing of KBH4 and [Co (NH3) 6]
Cl3,” Solid State Commun., 137 [1–2] 44–8 (2006).
22C. Zhi, Y. Bando, C. Tang, D. Golberg, R. Xie, and T. Sekiguchi,
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IV. Conclusion
Large quantities of h-BN nanoplates with hexagonal
morphologies have been successfully prepared by a facile
template- and catalyst- free two-step method, which was car-
ried out at comparatively low-temperature and under normal
pressure conditions. The XRD patterns, Raman, and FTIR
spectra show that the products are pure and have high crys-
tallinity. From SEM images, the synthesized nanoplates have
diameters of 300–500 nm and the thickness is below 30 nm.
Optical properties have been systematically investigated via
UV–vis absorption spectrometry and PL spectrometry. The
UV–vis absorption spectrum indicates that the samples have
a band gap of ~6.07 eV; the presence of the two low-energy
lines at ~225 nm (~5.50 eV) and at 278 nm (4.45 eV) in our
work indicates that optical absorption transitions at 4.45 and
5.5 eV are not intrinsic characteristics of BN-nanotubes, sin-
gle-wall or multi-wall. Strong violet–blue PL emission with a
broad band ranging from 400 to 475 nm has been observed
in PL spectrum, indicating that the h-BN nanoplates
as-grown by this simple route are highly promising for appli-
cation in nanosize optical devices (LEDs, blue-light source,
UV detector, etc.). The phonon replica features are obvious
in the photoluminescence spectroscopy.
23D. Golberg, A. Rode, Y. Bando, M. Mitome, E. Gamaly, and B. Luther-
Davies, “Boron Nitride Nanostructures Formed by Ultra-high-repetition Rate
Laser Ablation,” Diamond Relat. Mater., 12 [8] 1269–74 (2003).
24K. F. Huo, F. Chen, J. J. Fu, Y. Chen, B. H. Liu, J. Ding, Z. L. Dong,
and T. White, “Synthesis of Boron Nitride Nanowires,” Appl. Phys. Lett., 80
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25Z. Chen, J. Zou, G. Lu, G. Liu, F. Li, and H. Cheng, “ZnS Nanowires
and Their Coaxial Lateral Nanowire Heterostructures with BN,” Appl. Phys.
Lett., 90 [10] 103117 (2007).
26L. Yin, Y. Bando, Y. Zhu, D. Golberg, and M. Li, “A Two Stage Route
to Coaxial Cubic Aluminum Nitride–Boron Nitride Composite Nanotubes,”
Adv. Mater., 16 [11] 929–33 (2004).
27M. Terrones, J. Charlier, A. Gloter, E. Cruz-Silva, E. Terres, Y. Li, A.
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28C. Tang, Y. Bando, Y. Huang, C. Zhi, and D. Golberg, “Synthetic Routes
and Formation Mechanisms of Spherical Boron Nitride Nanoparticles,” Adv.
Funct. Mater., 18 [22] 3653–61 (2008).
29Z. Chen, J. Zou, G. Liu, F. Li, Y. Wang, L. Wang, X. Yuan, T. Sekigu-
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30Z. Chen, J. Zou, Q. Liu, C. Sun, G. Liu, X. Yao, F. Li, B. Wu, X. Yuan,
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