CrystEngComm
Communication
The pure polycrystalline samples of the two compounds were
put in a platinum crucible, heated to 1050 °C, and then slowly
cooled down to room temperature. Analysis of the residue of
BaPbSi2O6 in the platinum pan revealed that BaPbSi2O6
decomposed to BaSi2O5 and SiO2 (Fig. S4a, ESI†). However,
BaPbSi2O6·BaSO4 did not decompose (Fig. S4b, ESI†), which
further suggests that BaPbSi2O6·BaSO4 has higher thermal
stability than BaPbSi2O6. Next, BaPbSi2O6·BaSO4 in the platinum
crucible was heated to 1400 °C. Analysis of the residue in the
platinum pan revealed that BaPbSi2O6·BaSO4 decomposed
to BaSi2O5, BaSO4 and SiO2, as well as some unidentified
products (Fig. S4b, ESI†). Therefore, it is necessary to use
the flux method to grow large single crystals of the two
compounds.
In order to specify and compare the coordination of
silicon and sulfur in both compounds, the IR spectra were
measured, and they display similar features (Fig. S5, ESI†).
The main IR absorption region between 1200–450 cm−1
reveals several absorption bands on account of the stretching
and bending vibrations of the Si–O and S–O groups, which
are similar to those of other metal silicates and sulfates.1f,h,18
The IR spectra further confirm the existence of SiO4 and SO4
tetrahedra, which are consistent with the results obtained
from the single-crystal X-ray structural analysis of the two
compounds.
Fig. S6, ESI† shows the optical diffuse reflectance spectra
of the two compounds, which were converted from UV-vis-NIR
diffuse reflectance spectra using the Kubelka–Munk function.21
The UV cut-off edges of the two compounds are all below
300 nm. From the F(R) versus E(eV) plots, the band gap
of BaPbSi2O6 is about 3.27 eV, and the band gap of
BaPbSi2O6·BaSO4 is about 3.30 eV. That means that the
introduction of the SO4 group has not apparently influenced
the band gap, which will be explained well using the theoreti-
cal calculations as discussed below.
The band structures of BaPbSi2O6 and BaPbSi2O6·BaSO4
along the high symmetry points of the first Brillouin zone
(BZ) are shown in Fig. S7, ESI.† It can be seen that both com-
pounds are indirect-gap materials. The calculated band gaps
are 3.24 eV for BaPbSi2O6 and 3.29 eV for BaPbSi2O6·BaSO4,
which are in good agreement with the values obtained from
the diffuse-reflectance spectra. The partial density of states
(PDOS) for the two compounds are similar. As shown in
Fig. S8, ESI,† the PDOS can be divided into three major
distinct regions for both compounds. It is worth noting that
the states near the band gap are mainly composed of Ba 5p
and O 2p orbitals below the Fermi level, and Ba 6d and Si 2p
states at the bottom of the conduction bands for both
compounds. Accordingly, the absorption spectra near the UV
cutoff edge can be assigned as charge transfers from the Ba
5p and O 2p states to the Ba 6d and Si 2p states, leading to
the UV cutoff edge of both compounds being located at about
300 nm.
According to the electronic structure calculations, the absorp-
tion spectra near the UV cutoff edge can be assigned as charge
transfers from the Ba 5p and O 2p states to the Ba 6d and Si 2p
states, which means that the introduction of the SO4 group has
not apparently influenced the band gap. This is the first report
of the synthesis of mixed anionic compounds via BaSO4 salt-
inclusion. Further research on the mixed anionic compound
via sulfate salt-inclusion is in progress.
Acknowledgements
This work is supported by the 973 Program of China (grant
no. 2012CB626803), the National Natural Science Foundation
of China (grant no. U1129301, 51172277, 21201176, 21101168,
11104344), the Main Direction Program of Knowledge Inno-
vation of CAS (grant no. KJCX2-EW-H03-03), The Funds for
Creative Cross & Cooperation Teams of CAS, the Major
Program of Xinjiang Uygur Autonomous Region of China
during the 12th Five-Year Plan Period (grant no. 201130111),
the High Technology Research & Development Program of
Xinjiang Uygur Autonomous Region of China (grant no.
201116143, 201315103), and the Science and Technology
Project of Urumqi (grant no. G121130002).
Notes and references
1 (a) Y. Wang, S. L. Pan, M. Zhang, S. J. Han, X. Su and
L. Y. Dong, CrystEngComm, 2012, 18, 12046; (b) J. L. Song,
C. L. Hu, X. Xu, F. Kong and J. G. Mao, Inorg. Chem., 2013,
52, 8979; (c) R. E. Sykora, K. M. Ok, P. S. Halasyamani,
D. M. Wells and T. E. Albrecht-Schmitt, Chem. Mater., 2002,
14, 2741; (d) J. Zhao and R. K. Li, Inorg. Chem., 2012, 51,
4568; (e) I. Boy, F. Stowasser, G. Schäfer and R. Kniep,
Chem. – Eur. J., 2001, 7, 834; ( f ) H. A. Höppe, K. Kazmierczak,
M. Daub, K. Förg, F. Fuchs and H. Hillebrecht, Angew.
Chem., Int. Ed., 2012, 51, 6255; (g) S. L. Pan, Y. C. Wu,
P. Z. Fu, G. C. Zhang, Z. H. Li, C. X. Du and C. T. Chen,
Chem. Mater., 2003, 15, 2218; (h) H. P. Wu, H. W. Yu,
S. L. Pan, Z. J. Huang, Z. H. Yang, X. Su and
K. R. Poeppelmeier, Angew. Chem., Int. Ed., 2013, 52, 3406.
2 (a) R. Kniep, G. Schäfer, H. Engelhardt and I. Boy, Angew.
Chem., 1999, 111, 3857; (b) R. Kniep, G. Schäfer,
H. Engelhardt and I. Boy, Angew. Chem., Int. Ed., 1999,
38, 3641.
3 (a) Z. H. Li, Z. S. Lin, Y. C. Wu, P. Z. Fu and
Z. Z. Wang, Chem. Mater., 2004, 16, 2906; (b) S. G. Zhao,
G. C. Zhang, K. Feng, J. Lu and Y. C. Wu, Cryst. Res.
Technol., 2012, 47, 391.
4 M. Daub, K. Kazmierczak, P. Gros, H. Höppe and
H. Hillebrecht, Inorg. Chem., 2013, 52, 6011.
5 Y. J. Shi, S. L. Pan, X. Y. Dong, Y. Wang, M. Zhang,
F. F. Zhang and Z. X. Zhou, Inorg. Chem., 2012, 51, 10870.
6 H. W. Yu, S. L. Pan, H. P. Wu, Z. H. Yang, L. Y. Dong, X. Su,
B. B. Zhang and H. Y. Li, Cryst. Growth Des., 2013, 13, 3514.
7 F. H. Irran, E. Tillmanns and G. Hentschel, Mineral. Petrol.,
1997, 60, 121.
In conclusion, the synthesis of a novel complex silicate and
sulfate compound, BaPbSi2O6·BaSO4, is a result of the inclu-
sion of the BaSO4 salt en route to the BaPbSi2O6 framework.
This journal is © The Royal Society of Chemistry 2014
CrystEngComm, 2014, 16, 5993–5996 | 5995