Investigation of the effects of very low pressure chemical vapor deposited TiSi2 on device electrical characteristics

Article abstract of DOI:10.1149/1.2096389

We report for the first time the effects of very low pressure chemical vapor deposited (VLPCVD) titanium silicide on device electrical characteristics. The compatibility of this material for VLSI technology is examined through careful characterization of

Full text of DOI:10.1149/1.2096389

Downloaded on 2015-06-06 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-06 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-06 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-06 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-06-06 to IP 128.122.253.212 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).