Tungsten silicide films deposited by SiH2Cl2-WF6 chemical reaction

DOI: 10.1149/1.2096848

Source and publish data:

Journal of the Electrochemical Society p. 1177 - 1180 (1989)

Update date:2022-08-25

Topics:

Authors:

Hara Hara

Miyamoto

Yokoyama

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Article abstract of DOI:10.1149/1.2096848

This paper studies tungsten silicide films deposited by the SiH₂Cl₂ (DCS)-WF₆ chemical reaction. The deposition rat was held at around 1500 angstrom/min at temperatures above 500°C. However, the deposition rate decreased r

Full text of DOI:10.1149/1.2096848

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