Tungsten silicide films deposited by SiH2Cl2-WF6 chemical reaction

Article abstract of DOI:10.1149/1.2096848

This paper studies tungsten silicide films deposited by the SiH₂Cl₂ (DCS)-WF₆ chemical reaction. The deposition rat was held at around 1500 angstrom/min at temperatures above 500°C. However, the deposition rate decreased r

Full text of DOI:10.1149/1.2096848

Downloaded on 2015-03-09 to IP 130.237.29.138 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-09 to IP 130.237.29.138 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-09 to IP 130.237.29.138 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-09 to IP 130.237.29.138 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).