J. Am. Ceram. Soc., 89 [9] 2967–2969 (2006)
DOI: 10.1111/j.1551-2916.2006.01145.x
r 2006 The American Ceramic Society
ournal
J
Reactive Hot Pressing of ZrB2–SiC–ZrC Ultra High-Temperature
Ceramics at 18001C
Wen-Wen Wuz, Guo-Jun Zhang,*,w Yan-Mei Kan, and Pei-Ling Wang
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics,
Shanghai 200050, China
A ZrB2–SiC–ZrC composite was prepared from a mixture of
zirconium, silicon, and B4C via reactive hot pressing at a
relatively low temperature (18001C) for 60 min under 20 MPa
in an argon atmosphere. The relative density was 96.8%, the
micro-hardness (Hv10) was 16.7 GPa, and the fracture tough-
The addition of ZrC to ZrB2–SiC to form a ternary composite
of ZrB2–SiC–ZrC can tailor the microstructure and properties
of ZrB2–SiC, especially the superior resistance to oblation at a
high temperature.10 In the current work, a composite in the
ZrB2–SiC–ZrC system was prepared by RHP, using Zr, Si, and
B4C as starting powders according to reaction (2):
ness was 5.1 MPa m1/2. The presence of ZrC was helpful for
.
the densification process and improved the mechanical proper-
ties of the composite. A model of the microstructure develop-
ment of the composite was proposed to explain the phase
distribution.
ð2 þ xÞZr þ ð1 ꢁ xÞSi þ B4C
¼ 2ZrB2 þ ð1 ꢁ xÞSiC þ xZrC
(2)
When x 5 0, reaction (2) reduces to reaction (1). In the
present work, we took x 5 0.20 based on calculations for
maintaining the content of SiC at 20 vol%. The calculated
volumetric composition is (vol%) 73.6ZrB2120SiC16.4ZrC.
The theoretical density of the composite calculated according
to the rule of mixtures is 5.55 g/cm3, based on the densities of
6.09, 3.21, and 6.44 g/cm3 for ZrB2, SiC, and ZrC, respectively.
The true density should be lower than the calculated one due to
the impurities (mainly Ti). For comparison, a ZrB2–SiC com-
posite without ZrC (when x 5 0) was also prepared. Reactions
(1) and (2) are thermodynamically favorable and exothermic. In
this communication, the samples were produced under relatively
mild conditions (18001C), and the manufacturing process, me-
chanical properties, and microstructure of the composites are
reported, and the effect of ZrC on sintering is discussed.
I. Introduction
IRCONIUM diboride (ZrB2) and hafnium diboride (HfB2) are
ultra high-temperature ceramics (UHTCs) that have a
Z
number of unique properties, including extremely high melting
temperature and hardness, low volatility, and high thermal and
electrical conductivity.1 Studies have shown that composites of
diborides with silicon carbide (ZrB2/SiC and HfB2/SiC) are
candidates for ultra high-temperature applications, because the
addition of SiC can improve the oxidation resistance.2,3 The
presence of SiC can also increase the strength of the materials
by acting as a grain-growth inhibitor.4
For most of the reported studies, ceramic composites have
been fabricated simply by hot pressing from commercially
available powders. Reactive hot pressing (RHP) is an alternative
route. It can produce materials with novel and controlled
microstructures, with high chemical compatibility of the in
situ-formed individual phases, and phase distribution unifor-
mity.5 In boride-containing composites, for example, TiB2–SiC
binary composites and TiB2–Ti(C,N)–SiC ternary composites
have been prepared from a mixture of TiH2, Si, and B4C.6–8
For zirconium boride-containing UHTCs, a high-strength
ZrB2–SiC composite has been prepared by RHP at 19001C for
60 min under 30 MPa pressure from a mixture of Zr, Si, and
B4C according to reaction (1).9 The relative density of this
composite is 97.67% with a Vickers hardness of 21.0 GPa and
II. Experimental Procedure
The starting powders were Zr (purity 95.82%, impurities include
Ti 2.34, Hf 0.52, Fe 0.24, W 0.08, Cr 0.06, Ni 0.03, O 1.09,
particle size o25 mm, Guoyao Chemicals Co. Ltd., Shanghai,
China), Si (purity499%, particle size o50 mm, Yinfeng Silcon
Co. Ltd., Jinan, China), and B4C (purity 99%, particle size
about 2 mm, Jingangzuan Boron Carbide Co., Ltd, Mudanjiang,
China). The stoichiometric powders were mixed and ground in
ethanol in an agate mortar until all of the ethanol was evapo-
rated. The grinding process was repeated once for a total
grinding time of about 1 h. The mixed powder was then dried
and placed in a graphite die with a BN coating. The composite
was then RHPed at a temperature of 18001C for 60 min under a
pressure of 20 MPa in an argon atmosphere. A slow heating rate
(101C/min) was adopted to prevent the reaction from becoming
self-sustaining. The application of pressure was initiated at
15501C. The reacted disk had dimensions of 20 mm (diameter)
and 5 mm (thickness).
a facture toughness of 4.0 MPa ꢀ m1/2
.
2Zr þ Si þ B4C ¼ 2ZrB2 þ SiC
(1)
W. Fahrenholtz—contributing editor
After removing the surface layer from the hot-pressed disk by
grinding, the bulk density was measured using the Archimedes
method. Phase composition was determined by X-ray diffracto-
metry (XRD) using CuKa radiation. The disk was ground with
SiC abrasives and then polished using a diamond pastor of
1 mm. The hardness and fracture toughness were measured by
the indentation method, using a load of 10 kg for 10 s on a
Manuscript No. 21572. Received March 10, 2006; approved April 26, 2006.
This work was financially supported from the Chinese Academy of Sciences under the
Program for Recruiting Outstanding Overseas Chinese (Hundred Talents Program), the
National Natural Science Foundation of China, and the State Key Laboratory of High
Performance Ceramics and Superfine Microstructures of Shanghai Institute of Ceramics.
*Member, American Ceramic Society.
zwAuthor to whom correspondence should be addressed. e-mail: gjzhang@mail.sic.ac.cn
Graduate School of the Chinese Academy of Sciences, Shanghai, China.
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