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ChemComm
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COMMUNICATION
Journal Name
DOI: 10.1039/C9CC03843D
PHOLEDs.
In summary, a series of bipolar host materials viz., 4CzCzCN,
4CzCNCzCN, 24CzCzCN and 24CzCNCzCN, were designed and
synthesized for blue PHOLEDs by modifying the carbazole with
carbazole/cyanocarbazole donor and cyano acceptor at C4
and/or C2 and C3 positions, respectively. They showed high
triplet energy over 2.80 eV and bipolar carrier transport
properties. The blue PHOLEDs fabricated using the hosts for
blue CNIm dopant showed excellent device performance with
EQE over 20%. In the series, the 4CzCNCzCN host demonstrated
superior performance with EQE of 25.3% and CE of 48.1 cd/A
due to its high triplet energy (~ 3.03 eV) and balanced charge
transport. We believe that these results provide fundamental
insights to design efficient high triplet energy bipolar host
materials by modifying a carbazole building block.
Fig. 2 a) Current density (J)-voltage (V)-luminance (L) and b) EQE vs luminance
plots of the devices
The current density (J)-voltage (V)-luminance (L) plots of the
devices are portrayed in Figure 2 and the related device
parameters are summarized in Table S2. Notably, the
cyanocarbazole featured compounds (4CzCNCzCN and
24CzCNCzCN) showed relatively high current densities and
luminance compared to the carbazole substituted derivatives
(4CzCzCN and 24CzCzCN). This can be explained based on the
current density of single carrier devices as discussed above.
Generally, in the CNIm doped devices, hole trapping dominates
the device performance due to the shallow HOMO level of the
CNIm dopant. Thus, the J of EOD is critical for the J of the hole
trapping devices because the electrons would be predominantly
carried by the host materials. As discussed above, the
compounds 4CzCNCzCN and 24CzCNCzCN displayed relatively
high J for EOD compared to 4CzCzCN and 24CzCzCN due to their
good electron transport properties and shallow LUMO levels,
which facilitated efficient electron injection and transport. As a
result, it is expected that the high J of 4CzCNCzCN and
24CzCNCzCN EOD improved the J of hole trapping type CNIm
based blue PHOLEDs and led to balanced charge transport in the
devices. Also, the 4CzCNCzCN and 24CzCNCzCN devices
revealed low turn-on voltage (Von) compared to the 4CzCzCN
and 24CzCzCN device due to the deep LUMO level of the former
derivatives enabling facile electron injection. All compounds
showed blue electroluminescence (EL) with peak maximum of
464 nm originating from the emission of CNIm phosphor (Figure
S6) and the CIE color coordinates lies in the range of x ~ 0.15,
0.29 ≤ y ≤ 0.30. No other emission peaks are observed from the
host materials or any other layers, indicating efficient energy
transfer from the host to the dopant. Transient PL data in
supporting information also confirms the energy transfer.
All compounds showed excellent device performances with
maximum EQE/current efficiency (CE)/power efficiency (PE) of
24.5%/48.0 cd/A/31.8 lm/W for 4CzCzCN, 25.3%/48.1
cd/A/39.3 lm/W for 4CzCNCzCN, 22.2%/43.7 cd/A/31.7 lm/W
for 24CzCzCN and 21.4%/40.8 cd/A/34.4 lm/W for 24CzCNCzCN
because of high triplet energy above 2.80 eV and good bipolar
charge transporting property. Indeed, the mono-substituted
derivatives demonstrated superior device performance than
the di-substituted analogues due to their high triplet energy.
Overall, the 4CzCNCzCN hosted device characterized best
performance in the series with superior EQE, CE and PE due to
high ET (~ 3.06 eV) for efficient forward energy transfer and
balanced charge carrier transport in the EML. The device data
at 5% doping concentration showed the same trend. These
results indicates that the modification of carbazole core at C4
and C3 positions with donor and acceptor units is promising to
This work was funded by the Basic Science Research Program
(Grant No. 2016M3A7B4909243 and 2018R1D1A1B07048498)
through the National Research Foundation (NRF) of Korea
funded by the Ministry of Science, ICT, and Future Planning.
Conflicts of interest
There are no conflicts to declare
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