Film and device preparation
Thin films of 6 and 7, up to 400 A thick, were prepared by
S. R. Ferrer, P. O. Jackson, S. M. Khan, L. May, M. O’Neill,
E. Nicholls, S. M. Kelly and J. C. Richards, Adv. Mater., 2000, 12,
971.
J. Cornil, D. A. dos Santos, X. Crispin, R. Silbey and J. L. Br e´ das,
J. Am. Chem. Soc., 1998, 120, 1289; J. Cornil, J. Ph. Calbert,
D. Beljonne, R. Silbey and J. L. Br e´ das, Adv. Mat, 2000, 12, 978;
J. Cornil, J. Ph. Calbert and J. L. Br e´ das, J. Am. Chem. Soc., 2001,
˚
2
7
vacuum deposition at 10
mbar, using a double filament
8
9
Knudsen cell, heating the crucible at the optimized evaporation
temperature of 185 uC and 175 uC respectively, after a slow
heating ramp suitably chosen to prevent overheating of the
1
23, 1250.
M. Bellet eˆ te, J. F. Morin, S. Beaupr e` , M. Ranger, M. Leclerc and
2
1
˚
source. The mean growing rates ranged from 3 A min to
2
1
˚
5
A min
Cast films of 6, 7, 8, 9 were obtained on quartz and ITO
at room temperature from THF, CHCl , cyclohexane and
.
G. Durocher, Macromolecules, 2001, 34, 2288.
10 N. Johansson, D. A. Dos Santos, S. Guo, J. Cornil, M. Fahlman,
J. Salbeck, H. Schenk, H. Arwin, J. L. Br e´ das and W. R. Salanek,
J. Chem. Phys., 1997, 107, 2542; R. W. Alder, K. R. Anderson,
P. A. Benjes, C. P. Butts, P. A. Kouitentis and A. G. Orpen, Chem.
Commun., 1998, 309; N. Johansson, J. Salbeck, J. Bauer,
F. Weiss o¨ rtel, P. Br o¨ ms, A. Andersson and W. R. Salaneck,
Adv. Mater., 1998, 10, 1136; W. Kreuder, D. Lupo, J. Salbeck,
H. Schenk and T. Stehlin, US Patent 5621131, 1997; D. Lupo,
J. Salbeck, H. Schenk, T. Stehlin and R. Stern, U. S. Patent
5840217, 1998; W. Yu, J. Pei and A. J. Heeger, Adv. Mater., 2000,
12, 828.
3
toluene. Subsequent thermal treatments on films of 6 were
carried out under nitrogen atmosphere, after three evacuation
cycles.
Spin coated films of 6 were prepared at 2000 rpm from
2
cyclohexane and toluene solution (8 mg cm ). Very thin films
3
(
Av 0.05) were used for PL measurements, while thicker films
were employed for device preparation. LEDs were prepared
by spin coating onto ITO (indium–tin-oxide) coated glass
substrates, by evaporating Ca and Al as top electrode at
vacuum v10 mbar and deposition rates of 150 A min
11
12
13
M. Fukuda, M. Sawada and K. Joshino, J. Polym. Sci., Part A:
Polym. Chem., 1993, 31, 265.
M. Ranger, D. Rondeau and M. Leclerc, Macromolecules, 1997,
2
6
21
.
˚
3
J. K. Stille, D. R. McKean, G. Parrinello and A. F. Renaldo,
0, 7686.
Acknowledgement
J. Org. Chem., 1987, 52, 422.
14 F. Larmat, J. R. Reynolds, B. A. Reinhardt, L. L. Brott and
Partial contributions to this work from both oriented project
MATSTA II of C.N.R. and project ‘‘Nanotechnologies’’ of
M.U.R.S.T. are kindly acknowledged. We also thank Professor
Lanfranchi for useful discussions. We are also indebted to
Professor F. De Martin of ‘‘Dipartimento di Chimica
Strutturale e Stereochimica Inorganica’’ for single crystal
structural analysis.
S. J. Clarson, J. Polym. Sci., Part A: Polym. Chem., 1997, 35, 3627.
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and M. Leclerc, Can. J. Chem., 1998, 76, 1571.
N. Miyaura and A. Suzuki, Chem. Rev., 1995, 95, 2457.
M. Leclerc, M. Ranger and F. B e´ langer-Gari e´ py, Acta Crystal-
logr., Sect. C, 1998, 54, 799.
1
5
1
1
6
7
18 H. F. Lieberman, R. J. Davey and D. T. M. Newsham, Chem.
Mater., 2000, 12, 309.
1
2
2
2
2
2
2
9
0
1
2
3
4
5
A. Bolognesi, W. Porzio, G. Zhuo and T. Ezquerra, Eur. Polym.
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