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considered much less efficient photocatalysts than TiO2. The
results obtained for the p-type metal-oxide semiconductors
are summarized in Table 1, whereas Figure S1 (see the
Supporting Information) shows the temporal evolution of
CH4 upon irradiation in the presence of the p-type semi-
conductors using simulated solar light.
In contrast to experiments performed in the dark, where
no products are formed (see footnote [a] in Table 1), or in
contrast to the generation of CO2 using TiO2, p-type semi-
conducting metal oxides of Ni, Cu, Fe, and Co afford
significant amounts of CH4 in the gas phase upon sunlight
irradiation. Equation (2) provides the presumed stoichiom-
gradually. CH4 exhibits an induction period at initial times
and is formed as a secondary product. These temporal
profiles, particularly the fact that the rate of H2 decrease is
about one half that of the CH4 growth, provide kinetic
support to a CH4 formation mechanism involving prior
generation of H2 from H2O vapor and subsequent reaction
of H2 to form CH4.
With regard to Table 1, it is worth commenting on the high
percentage of carbon present on the solid photocatalyst,
particularly in the cases of NiO, Co2O3, and Fe2O3. This
carbonaceous residue adsorbed on the photocatalyst was
characterized by Raman and X-ray photoelectron spectros-
copy (XPS; see Figures S2 and S3), both spectra being
compatible with the assignment of this residue to graphitic
carbon generated in the photocatalytic process. The fresh
photocatalysts do not show any carbon-related Raman peak.
However, after irradiation, the characteristic 2D, G, and D
bands of carbon appearing between 2500–2900 and at 1600
and 1350 cmꢁ1 were observed.
XPS of the photocatalyst after being used shows the
presence of a peak at 285.12 eV that can be deconvoluted in
three major components corresponding to sp2 graphene
C atoms (67%), sp2 C atoms bonded to O (25%), and sp3
C atoms (8%), respectively. The percentage of carbonaceous
residue deposited on each material before and after irradi-
ation was determined by combustion elemental analysis of the
solid. The carbon content of the fresh photocatalysts was
negligible, whereas it was necessary to consider the amount of
carbon deposited on the photocatalyst after the reaction,
together with the CH4 and CO2 formed in the gas phase to
calculate satisfactorily the C mass balance (> 95%) in all
cases. This indicates that CO is converted not only into gas-
phase products, but it also forms carbon deposits on the solid.
In agreement with the presence of carbon on the used
photocatalyst, the colored metal oxides after the reaction
become in some cases visually black (see the inset in Figure S2
for NiO).
CO þ 2 H2O ! CH4 þ 1:5 O2 ðDG0 ¼ 541 kJ molꢁ1
Þ
ð2Þ
etry of the CH4 formation for the photocatalytic CO
reduction by water using simulated solar light. While TiO2 is
a white powder, all the rest of the transition metals in Table 1
are colored, the visible absorption bands being responsible for
the notable sunlight photoactivity (up to 33 times that of
TiO2). Particularly notable is the performance of NiO and
Fe3O4 (in its most abundant a-polymorph)[17] where the
production of CH4 is the highest (10.2% in the gas-phase
mixture in the case of NiO). These differences in photo-
catalytic activity in the series of p-type metal-oxide semi-
conductors are unlikely to arise from differences in their
surface area, since they show similar values (see Table S1). It
is more reasonable to attribute the results to the intrinsic
photocatalytic properties (redox potentials of electrons and
holes, efficiency of charge separation and lifetime of charge
separation among other parameters to be considered) of the
semiconductor.
Figure 1 shows the temporal evolution of the CO con-
version and the formation of CO2, CH4, and H2 using NiO as
photocatalyst and H2O as reducing agent under simulated
sunlight irradiation. As can be seen in Figure 1, H2 is formed
as primary, but unstable product and its proportion grows in
the first hour of irradiation, but subsequently decreases
The behavior observed for p-type semiconductors (for-
mation of large CH4 percentages in the gas phase and carbon
residues on the solid) sharply contrasts with the photocata-
lytic activity of TiO2 commented earlier [Eq. (1)]. Additional
tests using CeO2 as photocatalyst, another n-type semicon-
ductor, also show the preferential formation of CO2. Sunlight
conversion of CO using TiO2 and CeO2 is about 30 times
lower than the conversion achieved by p-type metal oxides.
This low activity of TiO2 and CeO2 at solar light irradiation is
well-known and derives from their limited visible-light
photoresponse of these wide-bandgap semiconductors.
Besides the advantageous photoaction spectra of n-type
semiconductors arising from the visible-light absorption of
these materials, the different photocatalytic behavior of p-
and n-type semiconductors could derive from the higher
conduction-band potential in p-type semiconductors (+ 0.8 V
versus the normal hydrogen electrode, NHE, for Ni)[18]
compared to TiO2 (ꢁ0.1 V versus NHE at pH 0)[19] and
CeO2 (ꢁ0.1 V).[12] A high conduction band potential favors
the reduction of CO to C and CH4 with respect to the
oxidation of CO to CO2 which is almost the sole process
observed for TiO2 and CeO2.
&
*
Figure 1. Photocatalytic CO ( ) conversion and formation of CO2 ( ),
~
!
CH4 ( ) and H2 ( ). Reaction conditions: gas-phase irradiation of
a moisture-saturated mixture of N2 (80%) and CO (20%, 4.9 mmol),
NiO 250 mg, irradiation source solar simulator (1000 Wꢂmꢁ2).
ꢀ 2013 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Angew. Chem. Int. Ed. 2013, 52, 12983 –12987