
Journal of the American Chemical Society p. 5242 - 5248 (2017)
Update date:2022-08-11
Topics:
Peng, Xu
Guo, Yuqiao
Yin, Qin
Wu, Junchi
Zhao, Jiyin
Wang, Chengming
Tao, Shi
Chu, Wangsheng
Wu, Changzheng
Xie, Yi
Electronic state transitions, especially metal-insulator transitions (MIT), offer physical properties that are useful in intriguing energy applications and smart devices. But to-date, very few simple metal oxides have been shown to undergo electronic state transitions near room temperature. Herein, we demonstrate experimentally that chemical induction of double-exchange in two-dimensional (2D) nanomaterials brings about a MIT near room temperature. In this case, valence-state regulation of a 2D MnO2 nanosheet induces a Mn(III)-O-Mn(IV) structure with the double-exchange effect, successfully triggering a near-room-temperature electronic transition with an ultrahigh negative magneto-resistance (MR). Double-exchange in 2D MnO2 nanomaterials exhibits an ultrahigh MR value of up to -11.3% (0.1 T) at 287 K, representing the highest reported negative MR values in 2D nanomaterials approaching room temperature. Also, the MnO2 nanosheet displays an infrared response of 7.1% transmittance change on going from 270 to 290 K. We anticipate that dimensional confinement of double-exchange structure promises novel magneto-transport properties and sensitive responses for smart devices.
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