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L. Zhao et al. / Journal of Physics and Chemistry of Solids 69 (2008) 2019–2024
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Table 1
Fitting result for Ohmic resistance (R
resistance (R) of the single cells with different sintering temperatures of
Acknowledgment
o
i
), interface resistance (R ) and total
The authors gratefully acknowledge the financial sup-
port from the Ministry of Science and Technology of China
863 under Contract no. 2007AA05Z139.
1350, 1400 and 1450 1C at 600 1C
Sintering temperature (1C)
1
350
1400
1450
References
2
R
R
o
i
(O cm )
0.22
0.42
0.64
0.08
0.14
0.22
0.064
0.146
0.21
2
(O cm )
[1] N.Q. Minh, J. Am. Ceram. Soc. 76 (3) (1993) 563–588.
[2] X. Zhang, M. Robertson, C. Deces-Petit, W. Qu, O. Kesler,
R. Maric, D. Ghosh, J. Power Sources 164 (2007) 668–677.
2
R ¼ R
o i
+R (O cm )
[3] Y. Liu, S. Hashimoto, H. Nishino, K. Takei, M. Mori, J. Power
Sources 164 (2007) 56–64.
axis was interface resistance (R ). The intercept at low
i
[4] S. Li, Z. Lu, N. Ai, K. Chen, W. Su, J. Power Sources 165 (2007)
97–101.
frequency on the real axis was the total resistance (R),
where R ¼ R +R . The detailed fitting result for R , R and
[5] M. Matsuda, T. Hosomi, K. Murata, T. Fukui, M. Miyake, J. Power
Sources 165 (2007) 102–107.
o
i
o
i
R was displayed in Table 1. The two cells with the sintering
temperature of 1400 and 1450 1C exhibited almost the same
[
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1
34–137.
[7] A. Subramania, T. Saradha, S. Muzhumathi, J. Power Sources 165
(2007) 728–732.
interface resistance R , and the R of the cell with the
i
i
2
sintering temperature of 1350 1C was highest, 0.42 O cm .
With the increase of the sintering temperature, the total
resistance R decreased. The cell with the sintering tempera-
[8] D. Lee, J.-H. Han, Y. Chun, R.-H. Song, D.R. Shin, J. Power
Sources 166 (2007) 35–40.
[9] M. Kawano, H. Yoshida, K. Hashino, H. Ijichi, S. Suda,
K. Kawahara, T. Inagaki, Solid State Ion. 177 (2006) 3315–3321.
ture of 1450 1C exhibited the smallest ohmic resistance
2
(
R ¼ 0.064 O cm ), which resulted from the denser elec-
o
[10] J.L.M. Rupp, L.J. Gauckler, Solid State Ion. 177 (2006) 2513–2518.
[11] L. Jia, Z. Lu, X. Huang, Z. Liu, Z. Zhi, X. Sha, G. Li, W. Su, Ceram.
Int. 33 (2007) 631–635.
trolyte film sintered at 1450 1C. In Fig. 10, the cell with the
sintering temperature of 1450 1C provided a smaller
absolute value of slope than the cell with the sintering
temperature of 1400 1C in the region of low current density
in the I–V curve. This result was related to the smaller
[
[
12] C.R. Xia, M.L. Liu, Solid State Ion. 144 (2001) 249–255.
13] X. Xin, Z. Lu, Q. Zhu, X. Huang, W. Su, J. Mater. Chem. 17 (2007)
1627–1630.
14] J.V. Herle, R. Ihringer, R.V. Cavieres, L. Constantin, O. Bucheli,
J. Eur. Ceram. Soc. 21 (2001) 1855–1859.
[
ohmic resistance (R ) and total resistance (R) of the cell
o
[
[
15] K.W. Chour, J. Chen, R. Xu, Thin Solid Films 304 (1997) 106–112.
16] P.K. Srivastava, T. Quach, Y.Y. Duan, R. Donelson, S.P. Jiang,
F.T. Ciacchi, S.P.S. Badwal, Solid State Ion. 99 (1997) 311–319.
17] W.S. Jang, S.H. Hyun, J. Mater. Sci. 37 (2002) 2535–2541.
18] C.H. Wang, W.L. Worrel, S. Park, J.M. Vohs, R.J. Gorte,
J. Electrochem. Soc. 148 (8) (2001) A864–A868.
with the sintering temperature of 1450 1C as shown in
Table 1. However, the cell with the sintering temperature of
1
450 1C did not showed a highest power density, due to its
[
[
serious concentration polarization in the region of high
current density, as shown in Fig. 10. Therefore, the
optimum sintering temperature for screen-printing fabrica-
tion of SDC film was 1400 1C.
[
[
[
[
[
[
[
[
[
19] P. Charpentier, P. Fragnaud, D.M. Schleich, E. Gehain, Solid State
Ion. 135 (2000) 373–380.
20] J. Liu, W. Liu, Z. Lu, L. Pei, L. Jia, L.Y. He, W.H. Su, Solid State
Ion. 118 (1999) 67–72.
4
. Conclusions
21] K. Chen, Z. Lu, N. Ai, X. Huang, Y. Zhang, X. Ge, X. Xin, X. Chen,
W. Su, Solid State Ion. 177 (2007) 3455–3460.
22] J. Wang, Z. Lu, X. Huang, K. Chen, N. Ai, J. Hu, W. Su, J. Power
Sources 163 (2007) 957–959.
SDC electrolyte film was successfully fabricated by
screen-printing. Some technical parameters for the proces-
sing were optimized: printing times, ink composition and
sintering temperature. A seven or more times printing
processing was necessary to obtain dense SDC films. The
ink containing 40 wt% SDC powder was preferable for
screen-printing. The optimum sintering temperature for the
fabrication of SDC films was 1400 1C. The single cell with
23] Y. Zhang, X. Huang, Z. Lu, Z. Liu, X. Ge, J. Xu, X. Xin, X. Sha,
W. Su, J. Power Sources 160 (2006) 1065–1073.
24] Y. Zhang, X. Huang, Z. Lu, Z. Liu, X. Ge, J. Xu, X. Xin, X. Sha,
W. Su, J. Power Sources 160 (2006) 1217–1220.
25] X. Ge, X. Huang, Y. Zhang, Z. Lu, J. Xu, K. Chen, D. Dong, Z. Liu,
J. Miao, W. Su, J. Power Sources 159 (2006) 1048–1050.
26] I. Riess, M. Godickemeier, L.J. Gauckler, Solid State Ion. 90 (1996)
9
1–104.
the optimum parameters exhibited a power density of
2
27] M. Godickemeier, L.J. Gauckler, J. Electrochem. Soc. 145 (1998)
414–421.
0
.5 W/cm and an OCV of 0.82 V at 600 1C.