IN-SITU FTIR EMISSION SPECTROSCOPY ON CHEMICAL VAPOUR DEPOSITION PROCESSES

Article abstract of DOI:10.1016/0022-2860(90)80355-N

Infrared emission spectroscopy is a suitable method of detecting transient species in the gas phase and on the surface of growing layers inside a chemical vapour deposition process.The required high level of spectroscopic data results in the refinement of IR Fourier spectroscopy, the optimization of measuring conditions and the application of special modulation and spectra processing techniques.Results of the gas voronizing process of steel from BCl3/H2 mixtures and of the deposition of silicon carbide hard coatings from methyltrichlorosilane show the advantages of these techniques.In the gas phase transient species are detectable, e.g.HBCl2, H2BCl, BCl2 in the boron system and SiCl2, SiCl3, CH3, SiH2, Si2H4 in the silicon system, respectively.While on the metalic ironboride layer B-H, B-Cl and Fe-Cl species are found.