Tang et al.
to the corresponding hydrochloride which was recrystallized from
dry EtOH/Et2O.
X-ray diffraction data [λ(Mo KR) ) 0.710 73 Å] were collected
on a Bruker Smart Apex diffractometer, the temperature of the
crystal being controlled at 150 K by an Oxford Cryosystems
CRYOSTREAM device.48 Absorption corrections were performed
using the program SADABS.49 The structures of 1 and 3a,b were
solved by Patterson methods (DIRDIF50), and that of 2 was solved
by direct methods (SHELXS);51 full-matrix least-squares refinement
(against F2) was accomplished with the programs SHELXL52 for
1, 2, and 3b or CRYSTALS53 for 3a. The H atom attached to Ga
in 1 was modeled with the Ga-H distance fixed at 1.6 Å, being
placed in a calculated position and allowed to ride on its parent
atom. H atoms attached to Ga in 2 and to Ga and N in 3a were
located in difference maps and refined freely; those remaining were
placed in calculated positions. Non-hydrogen atoms were assigned
anisotropic displacement parameters.
3.2. Decomposition of Monochlorogallane: Characterization
of Ga4[HGaCl3]2[Ga2Cl6], 1. To study the thermal decomposition,
a small sample of monochlorogallane (ca. 100 mg) was isolated in
a sealed, preconditioned all-glass ampule equipped with a break-
seal. The progress of the change at 0 °C was monitored by periodic
reference to the Raman spectrum of the liquid and/or solid contents
of the ampule. Crystals of 1 formed after 8 weeks were selected
and transferred under dry nitrogen to a Schlenk tube for storage
and transport prior to X-ray analysis of an individual crystal. The
scale was insufficient to permit elemental analysis of 1, and NMR
measurements could not be made since the crystals were not
appreciably soluble in any organic solvent with which they did not
react. Raman spectrum (wavenumbers in cm-1): 1978 s ([HGaCl3]-),
607 w ([HGaCl3]-), 589 w ([HGaCl3]-), 377 w ([Ga2Cl6]2-), 336
m ([HGaCl3]-), ca. 315 sh ([Ga2Cl6]2-), 234 s ([Ga2Cl6]2-).18,23
3.3. Me3P‚GaH2Cl, 2. This was prepared on the millimole scale
in yields of ca. 60% by a method similar to that used for the
synthesis of Me3P‚GaH337 but with an excess of HCl. After filtering
of the reaction mixture, the Et2O solvent was evaporated from the
solution under vacuum. Heating the white solid residue, also under
vacuum, to 50 °C resulted in sublimation of white crystals of 2.
Raman spectrum (wavenumbers in cm-1): 2985 s, 2915 vs, 1889.5
s [ν(Ga-H)], 1424 w, 1121 w, 966 w, 759 m/724 w [δ(GaH2)],
672 m, 642 mw, 538 mw, 349 w. 1H NMR (C6D5CD3): δ 5.54 (s
2, GaH2), 0.81 (d 9, CH3).
s
The structure of 3b is extensively disordered. Both Bu ligands
are disordered over two orientations (60:40 for ligand 1 and 50:50
for ligand 2, where ligands 1 and 2 are based on N11 and N12,
respectively). In the major fraction of ligand 1 the terminal C atom
of the ethyl moiety is further disordered over three positions. In
one fraction of ligand 2 the ethyl group is distributed over two
sites. It is likely that disorder is, in reality, more extensive than
described here, as some displacement parameters of the disordered
methyl groups adopted very high values and a single overall Uiso
had to be adopted for these groups. All chemically equivalent bond
distances and angles were restrained to be similar. Only full-weight
atoms were refined with anisotropic displacement parameters. The
identity of the chloride anion was inferred from H-bonding to the
NH groups. N‚‚‚Cl interactions imply that the N is doubly
protonated. At ca. 100°, the N-Ga-N angle implies that the Ga,
too, is attached to two H atoms; these were placed in symmetrical
positions assuming r(Ga-H) ) 1.6 Å.
t
3.4. [H2Ga(NH2 Bu)2]Cl, 3a. This was prepared on the millimole
scale in yields of ca. 20% by the reaction of LiGaH4 with [tBuNH3]-
Cl in Et2O solution at room temperature following a procedure
analogous to that described previously for the synthesis of Me3N‚
36
GaH3 but adding the LiGaH4 to the [tBuNH3]Cl which was
therefore in excess. The product was purified by fractional
condensation at pressures <10-4 Torr. A sample of 3a was stored
at 273 K for 3 weeks whereupon small colorless crystals formed
on the walls of the vessel. Anal. Found: Cl, 13.7; Ga, 27.6%. Calcd
for C8H24ClGaN2: Cl, 14.0; Ga, 27.5%. Raman spectrum (wave-
numbers in cm-1): 3214 w, 3142 w, 2982 s, 2916 s, 2873 mw,
2796 w, 2734 w, 1927 vs/1910 m [ν(Ga-H)], 1479/1460 w, 1323/
1310 w, 1220 w, 1164 w, 1032 w, 937 w, 912 mw, 762/733 m
[δ(GaH2)], 686 w, 608 mw, 546 m, 504 mw, 431 w, 391 vw, 367
Acknowledgment. The Engineering and Physical Sci-
ences Research Council is thanked for financial support of
the Oxford and Edinburgh research groups and for funding
an Advanced Research Fellowship (T.M.G.) and research
studentships (C.Y.T. and S.M.).
Supporting Information Available: ORTEP plots and crystal-
lographic data in CIF format for all the compounds 1, 2, and 3a,b.
This material is available free of charge via the Internet at
t
vw, 270 mw. Field ionization MS (m/e): [M]+ 253/255, [M - -
BuNH2]+ 180/182, [tBuNH2]+ 73.
s
3.5. [H2Ga(NH2 Bu)2]Cl, 3b. Prepared from LiGaH4 and [s-
IC050986J
BuNH3]Cl in yields of less than 5% by a method similar to that
used for 3a, the product was purified by fractional condensation.
When a sample of 3b was stored at 273 K for 6 months, small
platelike crystals formed on the walls of the vessel. Raman spectrum
(wavenumbers in cm-1): 3077 mw, 2980 ms, 2930 s, 2913 ms,
2881 m, 1923 s [ν(Ga-H)], 1466 mw, 1126 w, 1044 w, 1005 w,
921 w, 835 mw, 740 m, 605 w, 485 m, br.
3.6. X-ray Crystallography. Table 1 gives crystal data and other
information on the structure determination and refinement for single
crystals of 1, 2, and 3a,b. Each set of measurements was made on
a crystal mounted under perfluoropolyether oil on a glass fiber.
(48) Cosier, J.; Glazer, A. M. J. Appl. Crystallogr. 1986, 19, 105.
(49) Sheldrick, G. M. SADABS, version 2.05; Bruker Analytical X-ray
Systems, Inc.: Madison, WI, 2001.
(50) Beurskens, P. T.; Beurskens, G.; Bosman, W. P.; de Gelder, R.; Garc´ıa-
Granda, S.; Gould, R. O.; Israe¨l, R.; Smits, J. M. M. DIRDIF-96;
Crystallography Laboratory, University of Nijmegen: Nijmegen, The
Netherlands, 1996.
(51) Altomare, A.; Cascarano, G.; Giacovazzo, C.; Guagliardi, A. J. Appl.
Crystallogr. 1993, 26, 343.
(52) Sheldrick, G. M. SHELXL-97; University of Go¨ttingen: Go¨ttingen,
Germany, 1997.
(53) Betteridge, P. W.; Carruthers, J. R.; Cooper, R. I.; Prout, K.; Watkin,
D. J. J. Appl. Crystallogr. 2003, 36, 1487.
7150 Inorganic Chemistry, Vol. 44, No. 20, 2005