Low-temperature surface passivation of silicon for solar cells

Article abstract of DOI:10.1149/1.2096673

Low-temperature-deposited silicon nitride and aluminum oxide films are investigated for reducing carrier recombination at the silicon surface. The insulator/silicon interface properties fixed charge density, fast interface state density, and surface recom

Full text of DOI:10.1149/1.2096673

Downloaded on 2014-09-26 to IP 128.59.222.12 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-09-26 to IP 128.59.222.12 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-09-26 to IP 128.59.222.12 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-09-26 to IP 128.59.222.12 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-09-26 to IP 128.59.222.12 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-09-26 to IP 128.59.222.12 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).