CHEMICAL VAPOR DEPOSITION OF Al2O3 THIN FILMS UNDER REDUCED PRESSURES.

Article abstract of DOI:10.1149/1.2113979

Al//2O//3 thin films were deposited by reduced-pressure CVD using aluminum tri-isopropoxide as a source. The dependence of the growth rate on the substrate temperature and the source gas supply was determined. The activation energy of the decomposition re

Full text of DOI:10.1149/1.2113979

Downloaded on 2015-04-20 to IP 128.122.253.228 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-20 to IP 128.122.253.228 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-04-20 to IP 128.122.253.228 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).