Organic Letters
Letter
removal. We could also selectively remove the liquid material
by immersing the film in aqueous propanol (H2O/2-propanol =
2:3 v/v) for 10 min at rt (Figure S20).
The chemical etching of copper is widely used in art and
industry. It is an important photolithographic process in the
production of printed circuit boards, the substrates on which
electronic parts are placed.13,14 Generally, a photoresist film is
formed on a copper substrate and exposed to light through a
mask. Then, the exposed/modified resist film is developed to
produce a pattern. An etching process removes the copper that
is not protected by the remaining resist. In the final step, the
remaining resist is stripped, leaving the patterned features of the
substrate.4,13
Figure 3. Crystal structures of 1b, 2b, and 3b. Top: single molecule
structures. Middle: crystal faces parallel to the molecular plane of (a)
Etching of a copper substrate was successfully achieved using
2c as a photoresist (the sequence (1) → (2) → (3) → (4) →
(6) in Figure 4a). A spin-coated film of 2c on a copper
the (101) face of 1b, (b) the (001) face of 2b, and (c) the (001) face
̅
of 3b, displayed as space-filling models. Bottom: the same crystal faces
as in the middle images showing two molecular layers, where the front
and rear layers are shown as stick and wireframe models, respectively.
A single molecule in each image is highlighted for clarity.
Second, the cis isomers generated by light irradiation at the
crystal surface should affect the macroscopic phase of the
sample. When the cis isomer has an mp sufficiently higher than
rt, the crystal does not melt. The solid cis isomer prevents
further isomerization because of steric hindrance.12 When the
mp is lower than rt, the liquid cis isomer appears and results in
further isomerization at the crystal−liquid interface. To
estimate the mp of the corresponding cis isomers, the thermal
behavior of the photoirradiated samples was investigated using
POM. It was revealed that the mp of the cis isomer of 2b is
around −6 °C (Figure S15), whereas that of 3b is around 90 °C
(Figures S16 and S17). These results show that the mp of the
cis isomer changes drastically because of the rather small
molecular modification upon the introduction of a methyl
group.
Since the phase transition occurs at the crystal surface, the
irradiation time strongly depends on the sample thickness for
the complete liquefaction. Therefore, it requires less photons
when the sample is thinner (Figure S9). In addition, the melted
state (liquid) covers the crystal and absorbs the incoming
photons resulting in slowing down the transition. Melting
occurs when the conversion at the crystal surface reaches the
ratio at which the mp of the isomer mixture is below rt.
For photolithography, a photoresponsive material should
possess film-forming ability, sensitivity to light exposure, spatial
resolution, compatibility with development chemicals, robust-
ness against etching reagents, low cost, low toxicity, and so on.
We fabricated spin-coated films (thickness: ∼1 μm) on a cover
glass and observed that 2c was able to form a good film (Figure
S18). The X-ray diffraction profile of the 2c thin film was
similar to that of the crystalline powder, indicating that it is also
crystalline (Figure S19).
When exposed to 365 nm light through a mask, the spin-
coated 2c exhibited a photoinduced phase transition to liquid
selectively in the irradiated regions (Figure S18). It should be
noted that the liquefaction of the thin film occurred within 60 s
of irradiation, much faster than the transition in the crystal
powder (Figure 1) at the same light intensity. We found no
significant dependence of the phase transition property on the
sample preparation method (crystalline films prepared by
cooling from the melt or by spin coating). Blowing, wiping, or
blotting can remove the liquid material (viscosity 425 mPa·s),
although each method must be optimized for complete
Figure 4. (a) Photolithographic process for the selective etching of
copper substrates. (b) Optical photomicrograph of a patterned
azobenzene 2c on a copper substrate (state D in (a)). (c) Photograph
of a patterned copper substrate being subjected to the processes (1) →
(2) → (5) → (6) (obtaining state F). (d) SEM image of the substrate
shown in (b). (e) SEM image of the copper substrate shown in (c).
substrate (commercially available copper-clad) was irradiated at
365 nm through a mask, and the substrate was immersed in a
propanol solution (Figure 4b and 4d). Then the substrate was
placed in an etching solution (23% FeCl3 in H2O). The
substrate was rinsed with water, and then with acetone, to
remove the unexposed 2c on top of the unetched copper layer
(Figure S22b). Thus, the spin-coated layer of 2c resists the
etching solution.
In addition, the developing and etching steps were combined
and carried out simultaneously by simply adding 2-propanol
(2.5% v/v) to the etching solution (the sequence (1) → (2) →
(5) → (6) in Figure 4a). A photograph and an SEM image of
the final product are shown in Figure 4c and 4e, respectively.
In summary, we have shown that simple rod-shaped
azobenzenes having a methyl group at the 3-position and
para-alkoxy chains exhibited crystal-to-liquid photoinduced
phase transitions at rt as revealed by optical observations,
spectroscopic analysis, and viscosity measurements. The
molecular packing and melting points of the corresponding
5014
dx.doi.org/10.1021/ol502223u | Org. Lett. 2014, 16, 5012−5015