3
088
Organometallics 2009, 28, 3088–3092
Synthesis and Characterization of Group 4 Amidinate Amide
Complexes M[CyNC(Me)NCy] (NR ) (R ) Me, M ) Ti, Zr, Hf;
2
2 2
R ) Et, M ) Zr)
†
‡
‡
†
,†
Jia-Feng Sun, Shu-Jian Chen, Yuxi Duan, Yi-Zhi Li, Xue-Tai Chen,* and
,
‡
Zi-Ling Xue*
State Key Laboratory of Coordination Chemistry, Nanjing National Laboratory of Microstructures, School
of Chemistry and Chemical Engineering, Nanjing UniVersity, Nanjing 210093, People’s Republic of China,
and Department of Chemistry, UniVersity of Tennessee, KnoxVille, Tennessee 37996-1600
ReceiVed February 28, 2009
2 2 2
Amidinate amide complexes M[CyNC(Me)NCy] (NR ) (M ) Ti, R ) Me (1); M ) Zr, R ) Me (2),
R ) Et, (3); M ) Hf, R ) Me (4); Cy ) cyclohexyl) have been prepared, and their crystal structures
q
show distorted-octahedral coordination spheres. Variable-temperature NMR studies give ∆H ) 2.8(0.2)
-
1
q
q
-1
q
kcal mol , ∆S ) -36(1) eu and ∆H ) 0.5(0.3) kcal mol , ∆S ) -44(1) eu for interconversions in
2
and 3, respectively.
Amidinates are ligands containing two nitrogen donor atoms
Chart 1
that, like their isoelectronic analogues carboxylates, bind to a
1
wide range of metals and nonmetals in a bidentate fashion.
The fundamental chemistry of amidinate complexes and unique
properties of the metal complexes containing versatile amidinate
ligands have led to active studies of these complexes and their
1
-5
applications. Metal amidinate systems with lower electron
counts at the metals have shown, for example, enhanced
electrophilic behavior that leads to reactivities not observed in
6
7
more commonly studied cyclopentadienyl (Cp) analogs. Ap-
materials in microelectronic devices. MO (M ) Ti, Zr, Hf)
2
plications of amidinate complexes include catalysis in several
species have been prepared from their amide precursors
2
8,9
10
5b
reactions such as olefin polymerization, hydrosilylation of
M(NMe ) ,
precursors.
tetraamidinates (Chart 1), and guanidinate
2
n
3
4
alkenes, and hydroamination, as well as the use of the
complexes as precursors in chemical vapor deposition (CVD)/
atomic layer deposition (ALD) of metal-containing microelec-
There are few known group 4 mixed amidinate amide
1
h,l,m
complexes.
Triamide Ti and Zr complexes containing a
5
,7-10
tronic materials.
Thin films of group 4 metal oxides with
large dielectric constants are of particular interest as insulating
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2
2
*
To whom correspondence should be addressed. E-mail: xue@utk.edu
Chem. 2001, 40, 6349. (d) Wu, J.; Li, J.; Zhou, C.; Lei, X.; Gaffney, T.;
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Z.-L.X.).
†
Nanjing University.
‡
University of Tennessee.
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0.1021/om900162b CCC: $40.75 2009 American Chemical Society
Publication on Web 04/24/2009