10.1002/anie.201801780
Angewandte Chemie International Edition
COMMUNICATION
morphology of the two kinds of QD films, see Figure S9). The
light-emitting properties of PPA-QDs and OA-QDs based LEDs
were thoroughly investigated. It was found that, with PPA-QDs
as active emitting layer, devices performance had been greatly
improved in luminance, current efficiency and current density,
which can be observed in Figure 4d, 4e, 4f (and Figure S10,
photograph of devices under working state). PPA-QDs LEDs
exhibited the maximum luminance about 9052 cd m-2 and current
efficiency about 9.08 cd A-1, which suppressed the result of OA-
QDs LEDs (457.5 cd m-2 and 1.14 cd A-1). These results were
consistent with the demonstrated carrier transport character of
PPA-QDs film, proving that the conjugated capping ligands not
only can be an effective ligand for HOIP colloidal QDs
preparation but also can enhance the carrier transport in HOIP
QDs films, so as to the high performance of LED device. Figure
4g, h schematically illustrates carriers transport in MAPbBr3
PPA-QDs and OA-QDs films. QDs films with the conjugated
PPA ligands can exhibit the higher conductivity owing to the
delocalization of the molecular electric orbitals and π-π stacking.
In addition, BA-QDs with shorter hydrocarbon chains were also
employed as the emitting materials in LEDs, that is, BA-QDs
LEDs with the same structured as PPA-QDs and OA-QDs LEDs,
shown in Figure S11. It is easily found that BA-QDs LEDs exhibit
luminance and current efficiency is 3522 cd m-2 and 2.60 cd A-1,
which is higher than those of OA-QDs LEDs, but quite lower
than those of PPA-QDs LEDs. This unveiled that although BA
with the shorter hydrocarbon chains could improve current
efficiency of QDs-LEDs compared with OA-QDs LEDs, its
performance is still limited by the insulating property of BA.
of PLQY and lifetime testing. Finally, we appreciated for the
meaningful discussing with M. Zhang and F. Yuan.
Keywords: HOIP QDs • conjugate ligand • PPA• carrier mobility
•QD-based LED
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This work was financially supported by National Natural Science
Foundation of China (Grant No. 11574248), National Key R&D
Program of China(Grant No. 2016YFB0400702) , the national
Natural Science Foundation of China(Grant No.61505161).The
SEM and TEM work was done at International Center for
Dielectric Research (ICDR), Xi'an Jiaotong University, Xi'an,
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