GROWTH OF Fe AND FeAs2 FILMS ON GaAs BY ORGANO-METAL CHEMICAL VAPOR DEPOSITION USING PENTACARBONYL IRON AND ARSINE.

Article abstract of DOI:10.1149/1.2115601

A number of iron and iron arsenide films have been grown using pentacarbonyl iron and arsine by conventional organo-metal chemical vapor deposition (OM-CVD) on single-crystal GaAs. Auger sputter profile on a 1240A-thick iron arsenide sample gave a composition consistent with the intended compound, FeAs//2, a narrow-gap semiconductor. Infra-red transmission data on the same film yielded an optical gap of 0. 16 plus or minus 0. 01 eV, which compares with the known electrical gap of 0. 22 eV for bulk FeAs//2. An apparent catalytic action of pentacarbonyl with arsine allows the iron arsenide to form from arsine at low temperatures near 300 degree C. The low temperature of growth suggests the possibility of forming heterostructures between a narrow-gap semiconductor and a ferromagnetic film. Such a structure was successfully grown on GaAs.

Full text of DOI:10.1149/1.2115601

Downloaded on 2014-11-06 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-06 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-06 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).