
Journal of the Electrochemical Society p. 1934 - 1939 (1988)
Update date:2022-08-28
Topics:
Razzini
Bicelli
Scrosati
Salvador
Pujadas
Decker
Using a light-spot technique which allows electro-optic and photoelectrochemical measurements while observing the electrode surface under 'a reflex microscope', the inhomogeneities and surface defects of polycrystalline CuInSe//2 electrodes were studied. Lead electrodeposition on the semiconductor surface was performed and it was shown to occur preferentially on localized surface regions. The configuration of the electrodeposit resembled closely the electrolyte electroreflectance map obtained from a systematic topological investigation. In fact, the intensity of the DELTA R/R signal was higher in the regions where lead electrodeposition took place and vice versa. These results revealed that low doped (high resistivity) domains exist on the surface of the n-type chalcogenide.
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