K. Chuntonov et al. / Journal of Alloys and Compounds 460 (2008) 357–362
359
Table 1
At the same time, the curves are similar in shape and both
are characterized by the presence of a minimum, which is con-
siderably shifted to the initial region of each deposition set. At
first sight, such a minimum seems to be an anomaly as both
constituents of the evaporation process, namely, the transfer of
lithium atoms into the vapor phase and the diffusion of these
atoms from the volume of the wire to the surface, are increasing
functions of the temperature. Meanwhile, the above-mentioned
Experimental data for deposition of lithium onto a quartz substrate
¯
˚
No.
T (K)
ꢀt (s)
c0 (at.%) Li
ꢀmLi (mg)
ꢀh (A)
1
2
3
4
5
793
823
838
848
903
140
690
505
600
265
28.5
28.4
28.3
28.2
28.0
0.016 0.001
0.029 0.002
0.040 0.0025
0.055 0.003
0.072 0.005
83
150
207
285
373
¯
behavior of the curves j − T is to be expected, and the following
two facts are important in understanding what is taking place:
¯
This predetermined both the general planning and details of the
present experiment.
The data for the first set of depositions (quartz substrate) are
given in Table 1. Here c0 is the gross composition of the Ag–Li
wire after introduction of the correction for the loss of lithium
during the previous deposition procedure, and ꢀh is the average
thickness of the lithium layer on the substrate.
As can be seen, the deposition of films of thickness
100–300 A is accompanied by a rather marginal change in the
that a vapor source such as an Ag-Li wire allows performing
multiple depositions of thin lithium layers with a practically
constant rate within the bounds of a single deposition.
the implicit dependence of the j − T curves on time and the
diffusionless character of evaporation in the initial stage of the
process.
According to our deposition procedure, the series of experi-
mental points that form curves 1 and 2 (Fig. 2) is an evolutionary
in the total concentration of lithium in the wire taking place, but
also the development of high chemical non-homogeneity in it.
In fact, this non-homogeneity determines the value of the evap-
oration flow. In essence, the graphs in Fig. 2 show the function
¯
˚
¯
j(T, t), of which it is known that ∂j(T, t)/∂T > 0, and ∂j(T, t)/∂t < 0
¯
[24]. Hence, the appearance of the minimum in curves j(T, t) is
inherent in the very nature of this function.
According to the data in Table 1, the linear rate of film growth
To make it clearer, let us establish the physical meaning of
the processes taking place in a wire that is periodically heated.
During the first heating of the initially chemically homogeneous
wire, onlylithiumatomsfromthesurfaceandfromthebordersof
the surface thin layer evaporate. The evaporation rate at this stage
is maximal. As a result of the loss of lithium, a thin layer which
almost completely consists of atoms of the non-volatile metal,
is created on the surface. That is, a diffusion barrier is formed
in the material, which abruptly decreases the evaporation rate.
At the same time, raising the temperature of the source in
every next deposition operation leads to the increase in evap-
oration flow (Fig. 2). The growth of the evaporation rate is
conditioned, in particular, by the fact that for the discussed mate-
rials, the energy of the diffusion activation is higher than the
energy of evaporation. So, although the thickness of the cover
layer depleted in lithium increases with time, the surface lithium
concentration also grows due to the temperature rise and this
becomes a cause for the growth of j [24].
¯
v = ꢀh/ꢀt on the inside cylindrical surface with a diameter
˚
from 10 to 100 mm is within the range of 0.1–4.0 A/s. At these
values of v, the process of deposition of monoatomic Li-layers
can be easily controlled automatically or manually.
However, the gradual decrease in the total concentration of
evaporation rate. To compensate for this decrease, it is necessary
to raise the temperature of the wire accordingly or to increase
the deposition interval ꢀt.
¯
Graphs j − T in Fig. 2 give some idea of how the evaporation
flow changes with temperature and time. Here curve 1 refers to
the set of depositions onto the quartz substrate, curve 2 refers
¯
to the set of depositions onto the steel substrate, and j is the
average evaporation rate during the time ꢀt. It can be seen that
curve 2 is situated a little lower than curve 1, which is connected
to the lower lithium content in the source in the deposition of
the second set.
¯
Thus, the unusual appearance of the experimental curves j −
T is sensibly explained from the position of the theory [24]
which predicts the formation of a thin film of non-volatile metal
on the surface of a solid solution when its volatile component
evaporates. These ideas are applied below in the derivation of
a simplified method of calculation of evaporation flow in metal
systems with intensive evaporation of one of the components.
4. Calculation of the evaporation flow
Let us consider the problem of evaporation of metal A from
a solid solution where the second component B has vapor pres-
sure many orders of magnitude lower than A. The vapor source
consists of a wire with length l and radius r0 and with initial con-
centration of volatile metal c0. The wire is placed along an axis
of an evacuated tube and heated with the current to a temperature
¯
Fig. 2. Curves j − T according to the data of Table 1: (1) quartz substrate; (2)
steel substrate.