Full text of DOI:10.1063/1.105066

High phosphorus doping of epitaxial silicon at low temperature and atmospheric
pressure
T. O. Sedgwick, P. D. Agnello, D. Nguyen Ngoc, T. S. Kuan, and G. Scilla
Citation: Applied Physics Letters 58, 1896 (1991); doi: 10.1063/1.105066
View online: http://dx.doi.org/10.1063/1.105066
View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/58/17?ver=pdfcov
Published by the AIP Publishing
Articles you may be interested in
Highly efficient oxidation of silicon at low temperatures using atmospheric pressure plasma
Appl. Phys. Lett. 90, 091909 (2007); 10.1063/1.2710190
High phosphorus doping of epitaxial silicon at low temperature and very low pressure
J. Vac. Sci. Technol. B 14, 2690 (1996); 10.1116/1.589005
Phosphorus doping in lowpressure silicon selective epitaxial growth
J. Vac. Sci. Technol. B 11, 117 (1993); 10.1116/1.586713
Lowtemperature selective epitaxial growth of silicon at atmospheric pressure
Appl. Phys. Lett. 54, 2689 (1989); 10.1063/1.101036
Phosphorus at High Temperatures and Pressures
J. Chem. Phys. 5, 945 (1937); 10.1063/1.1749968
This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.42.202.150 On: Tue, 25 Nov 2014 07:36:41

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.42.202.150 On: Tue, 25 Nov 2014 07:36:41

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.42.202.150 On: Tue, 25 Nov 2014 07:36:41

This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions. Downloaded to IP:
128.42.202.150 On: Tue, 25 Nov 2014 07:36:41