Electrochemical deposition of Pd, Ti, and Ge for applications in GaAs technology

Article abstract of DOI:10.1149/1.1836604

The electrolytic deposition of Pd, Ti, and Ge is demonstrated. A process for depositing smooth surfaces of layers from 10 to 100 nm and thicker is described. Applications of this technology for Schottky and ohmic contacts are shown and the advantages to similar evaporated metallization schemes are listed.

Full text of DOI:10.1149/1.1836604

Downloaded on 2015-03-08 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-08 to IP 138.251.14.35 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).