Characterization of selective tungsten films prepared by photo-chemical vapor deposition

Article abstract of DOI:10.1149/1.2085861

Selective photo-chemical vapor deposition (CVD) of tungsten films decomposed by direct photoexcitation of WF₆ have been studied. Film deposition rate increased with increasing temperature but was only slightly dependent on WF₆ gas concentration. The selectivity deteriorated with increasing deposition temperature, WF₆ concentration, and deposition time. Typically, in order to achieve selectivity, the flow rate of WF₆ must be lower than 35 sccm and the deposition temperature must be lower than 230°C. No encroachment and self-limited thickness problems were found as in the low-pressure chemical vapor deposition method. In general, tungsten films prepared by photo-CVD were amorphous as observed by x-ray diffraction analysis. After annealing, the tungsten had a polycrystalline structure with a resistivity of 18 μΩ-cm.

Full text of DOI:10.1149/1.2085861

Downloaded on 2014-11-24 to IP 128.111.121.42 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-24 to IP 128.111.121.42 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-24 to IP 128.111.121.42 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2014-11-24 to IP 128.111.121.42 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).