Journal of the Electrochemical Society p. 2542 - 2548 (1986)
Update date:2022-08-11
Topics:
McConica
Krishnamani
The rate equation for the low pressure chemical vapor deposition (LPCVD) of tungsten from tungsten hexafluoride on (100) silicon was experimentally determined in a laboratory scale single wafer vacuum reactor. The tungsten film deposition is initiated by the silicon reduction of tungsten hexafluoride. In the absence of hydrogen, the silicon reduction results in a 10-40 nm self-limiting tungsten deposit, with the thickness dependent upon the native oxide layer prior to deposition. The hydrogen reduction of tungsten hexafluoride is one-half order in hydrogen, zero order in tungsten hexafluoride, and has an activation energy of 73,000 J mol** minus **1 at temperatures from 561 to 683 K, and pressures from 0. 067-1. 3 kPa (0. 5 to 10 torr).
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