Journal of the Electrochemical Society p. 2542 - 2548 (1986)
Update date:2022-08-11
Topics:
McConica
Krishnamani
The rate equation for the low pressure chemical vapor deposition (LPCVD) of tungsten from tungsten hexafluoride on (100) silicon was experimentally determined in a laboratory scale single wafer vacuum reactor. The tungsten film deposition is initiated by the silicon reduction of tungsten hexafluoride. In the absence of hydrogen, the silicon reduction results in a 10-40 nm self-limiting tungsten deposit, with the thickness dependent upon the native oxide layer prior to deposition. The hydrogen reduction of tungsten hexafluoride is one-half order in hydrogen, zero order in tungsten hexafluoride, and has an activation energy of 73,000 J mol** minus **1 at temperatures from 561 to 683 K, and pressures from 0. 067-1. 3 kPa (0. 5 to 10 torr).
Contact:0571-
Address:zhejing
Contact:021
Address:Pudong
Nanjing Qirui Material Co., Ltd.
Contact:+86-25-52320053
Address:F4-5, #17 Building, Chuang Yi Yuan, No.6 Guanghua East Street, Nanjing, 210007 P.R.China
Shanghai Dynamic Industrial Co.,Ltd.
website:http://www.shdynamic.com
Contact:86-021 3392 6680
Address:Room 805 Information Tower, No.1403 Minsheng Road, Pudong New Area, Shanghai 200135, P. R. China
Changsha Goomoo Chemical Technology Co.Ltd
Contact:+86-731-82197655
Address:No.649,Chezhan Rd.(N),Changsha,Hunan,China
Doi:10.1021/jo00185a006
(1984)Doi:10.1016/bs.mie.2020.04.005
(2020)Doi:10.1021/jp046226w
(2005)Doi:10.1002/anie.201407512
(2014)Doi:10.1016/j.carres.2007.05.036
(2007)Doi:10.1016/j.jcat.2016.10.013
(2016)
