LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF TUNGSTEN ON POLYCRYSTALLINE AND SINGLE-CRYSTAL SILICON VIA THE SILICON REDUCTION.

Article abstract of DOI:10.1149/1.2115387

High purity metallic tungsten films are deposited on phosphorus-doped and undoped polycrystalline and single-crystal silicon by the silicon reduction of WF//6. Depositions are performed in a commercial LPCVD hot wall reactor at temperatures ranging from 310 degree -540 degree C. Film formation is self-limiting, meaning that after a given film thickness any further reaction between WF//6 and the underlying silicon is inhibited. Obtainable film thickness depends strongly on the doping condition of silicon and on surface preparation prior to LPCVD. Conventional wet chemical cleaning limits the maximum obtainable film thickness to approximately 400A, whereas with a low power argon plasma treatment approximately 900A thick films can be obtained reproducibly. The resistivity of these films is 18. 3 plus or minus 4. 5 mu OMEGA cm.

Full text of DOI:10.1149/1.2115387

Downloaded on 2015-03-10 to IP 130.126.162.126 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-10 to IP 130.126.162.126 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-10 to IP 130.126.162.126 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-10 to IP 130.126.162.126 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-10 to IP 130.126.162.126 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-10 to IP 130.126.162.126 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).

Downloaded on 2015-03-10 to IP 130.126.162.126 address. Redistribution subject to ECS terms of use (see ecsdl.org/site/terms_use) unless CC License in place (see abstract).