ON THE MECHANISM OF GROWTH OF CdTe BY ORGANOMETALLIC VAPOR-PHASE EPITAXY.

Article abstract of DOI:10.1149/1.2100404

In this paper are presented some experimental results to explain mechanisms involved in the growth of CdTe by organometallic vapor-phase epitaxy (OMVPE). A pyrolysis study of dimethylcadmium (DMCd) was conducted in an OMVPE reactor, in the temperature range 230 degree -400 degree C. It was found that dimethylcadmium decomposes above approximately 230 degree C and the reaction is heterogeneous from 230 degree to 370 degree C. CdTe growth was also studied over a range of temperature from 300 degree to 375 degree C and for various reactor parameters. In all cases, the CdTe deposition rate was found to be closely related to the decomposition of dimethylcadmium.

Full text of DOI:10.1149/1.2100404

On the Mechanism of Growth of CdTe by Organometallic
Vapor −Phase Epitaxy
Ishwara B. Bhat, Nikhil R. Taskar and Sorab K. Ghandhi
J. Electrochem. Soc. 1987, Volume 134, Issue 1, Pages 195-198.
doi: 10.1149/1.2100404
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