Indium phosphide

Base Information

• Chemical Name: Indium phosphide
• CAS No.: 22398-80-7
• Deprecated CAS: 1312-40-9,99658-38-5,312691-22-8,664330-95-4,1018852-66-8,2168551-95-7,2395838-81-8,312691-22-8,664330-95-4,99658-38-5
• Molecular Formula: InP
• Molecular Weight: 145.794
• European Community (EC) Number: 244-959-5
• UNII: SD36LG60G1
• DSSTox Substance ID: DTXSID3031444
• Wikipedia: Indium(III) phosphide,Indium phosphide,Indium_phosphide
• Wikidata: Q416291
• Mol file: 22398-80-7.mol

Synonyms:indium phosphide

Chemical Property of Indium phosphide

Chemical Property:

• Melting Point: 1070°C
• Boiling Point: °Cat760mmHg
• Flash Point: °C
• PSA: 0.00000
• Density: g/cm³
• LogP: 0.86120
• Water Solubility.: Insoluble in water.
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 0
• Rotatable Bond Count: 0
• Exact Mass: 145.8776408
• Heavy Atom Count: 2
• Complexity: 10

Purity/Quality:

99.9% ^*data from raw suppliers

Indium(III) phosphide (99.999%-In) PURATREM ^*data from reagent suppliers

Safty Information:

• Pictogram(s): T
• Hazard Codes: T
• Safety Statements: 24/25-45-53

MSDS Files:

SDS file from LookChem

Total 1 MSDS from other Authors

Useful:

• Chemical Classes: Metals -> Phosphides
• Canonical SMILES: P#[In]
• Uses: InP is used in high-power and high-frequency electronics because of its superior electron velocity. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. It is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices. In electronics for research on semiconductors.

Technology Process of Indium phosphide

There total 49 articles about Indium phosphide which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield: 88.0%

[(C4H9)2In(PH2)]3 → indium(III) phosphide (22398-80-7)

Guidance literature:

203°C;

DOI:10.1021/ja9640859

Reference yield: 80.0%

indium(III)trichloride tetrahydrate (22519-64-8) + yellow phosphorus (100320-09-0) → indium(III) phosphide (22398-80-7)

Guidance literature:

With potassium stearate; In ammonia; aq. NH3; 170 °C for 12 h, 25-28 % aq. NH3 (pH=13.62), stirring for 30 min,teflon-lined autoclave; cooling to room temp., standing, ppt. was filtered off, washed with distd. water, dil. AcOH then with abs. EtOH, dried in vac. at 70 °C for 2 h;

DOI:10.1246/cl.2002.1034

Reference yield: 77.5%

methanol (67-56-1) + [(C4H9)2In(P(Si(CH3)3)2)]2 → indium(III) phosphide (22398-80-7)

Guidance literature:

In toluene; (N2); stirring (room temp. 10 h), refluxing (10 h); filtration, washing (hexane), drying; elem. anal., transmision electron microscopy, X-ray diffraction;

DOI:10.1021/ja9640859

upstream raw materials:

Tris(trimethylsilyl)phosphane

indium chloride

phosphan

indium

Refernces

• 1、 Chuang, Linus C.,Moewe, Michael,Chase, Chris,Kobayashi, Nobuhiko P.,Chang-Hasnain, Connie,Crankshaw, Shanna. "Critical diameter for III-V nanowires grown on lattice-mismatched substrates". . . Retrieved 2007.
• 2、 Wang, Junli,Yang, Qing. "Benzene-thermal route to InP and InAs nanocrystals using triphenylphosphine and triphenylarsine as pnicogen sources". . p. 306 - 307. Retrieved 2008.
• 3、 Kawaguchi, Kenichi,Ekawa, Mitsuru,Kuramata, Akito,Akiyama, Tomoyuki,Ebe, Hiroji,Sugawara, Mitsuru,Arakawa, Yasuhiko. "Fabrication of InAs quantum dots on InP(100) by metalorganic vapor-phase epitaxy for 1.55 μm optical device applications". . p. 4331 - 4333. Retrieved 2004.
• 4、 Reitzenstein,Muench,Hofmann,Forchel,Crankshaw,Chuang,Moewe,Chang-Hasnain. "Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition". . . Retrieved 2007.
• 5、 Agger, Jonathan R.,Anderson, Michael W.,Pemble, Martyn E.,Terasaki, Osamu,Nozue, Yasuo. "Growth of quantum-confined indium phosphide inside MCM-41". . p. 3345 - 3353. Retrieved 1998.
• 6、 Gerbec, Jeffrey A.,Magana, Donny,Washington, Aaron,Strouse, Geoffrey F.. "Microwave-enhanced reaction rates for nanoparticle synthesis". . p. 15791 - 15800. Retrieved 2005.
• 7、 Tomaselli. "NMR study of InP quantum dots: Surface structure and size effects". . p. 8861 - 8864. Retrieved 1999.
• 8、 Thauern,Glaum, Robert. "Contributions on crystal chemistry and thermal behaviour of anhydrous phosphates. XXXIII. In2P2O7 an indium(I)-diphosphatoindate(III), and In4(P2O7)3 - Synthesis, crystallization, and crystal structure". . p. 479 - 486. Retrieved 2003.
• 9、 Lu, Hong-Liang,Terada, Yuki,Shimogaki, Yukihiro,Nakano, Yoshiaki,Sugiyama, Masakazu. "In situ passivation of InP surface using H2 S during metal organic vapor phase epitaxy". . . Retrieved 2009.
• 10、 Woo,Das,Cheng,Chen,Raghavachari,Hicks. "Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface". . p. 4888 - 4895. Retrieved 2006.