15112-89-7

Basic information

• Product Name: TRIS(DIMETHYLAMINO)SILANE
• Synonyms: TRIS(DIMETHYLAMINO)SILANE;n,n,n’,n’,n’’,n’’-hexamethyl-silanetriamin;n,n,n’,n’,n’’,n’’-hexamethylsilanetriamine;N,N,N’,N’,N’’,N’’-hexamethyl-Silanetriamine;TRIS(DIMETHYLAMINO)SILANE 99+%;Tris(dimethyamino)silane;N,N,N',N',N'',N''-hexamethyl-Silanetriamine tris(Dimethylamino)silane n,n,n',n',n'',n''-hexamethylsilanetriamine n,n,n',n',n'',n''-hexamethyl-silanetriamin Silanetriamine,N,N,N',N',N'',N''-hexamethyl-;N,N',N''-(Silanetriyl)tris(dimethylamine)
• CAS NO: 15112-89-7
• Molecular Formula: C₆H₁₉N₃Si
• Molecular Weight: 161.32
• EINECS: 239-165-0
• Product Categories: organosilicon compounds;ALD Precursors
• Mol File: 15112-89-7.mol
• Article Data: 9

Chemical Properties

• Melting Point: <0°C
• Boiling Point: 145 °C
• Flash Point: 25°C
• Appearance: colorless to light yellow/liquid
• Density: 0,838 g/cm3
• Refractive Index: 1.4247
• PKA: 10.93±0.70(Predicted)
• Sensitive: air sensitive, moisture sensitiv
• CAS DataBase Reference: TRIS(DIMETHYLAMINO)SILANE(CAS DataBase Reference)
• NIST Chemistry Reference: TRIS(DIMETHYLAMINO)SILANE(15112-89-7)
• EPA Substance Registry System: TRIS(DIMETHYLAMINO)SILANE(15112-89-7)

Safety Data

• Hazard Codes: F,C
• Statements: 10-36/37/38-52/53-34-29-20-15-11
• Safety Statements: 16-26-36/37/39-45-43
• RIDADR: 1993
• WGK Germany: 3
• RTECS: VV5800000
• TSCA: Yes
• Hazardous Substances Data: 15112-89-7(Hazardous Substances Data)

Usage

Uses

Tris(dimethylamino)silane (TDMAS) is used as an organosilicon source for the deposition of Si oxynitride; carbonitride; nitride and oxide thin films. It is also used to form multicomponent silicon containing thin films. The depositions can be carried out at low substrate temperatures (<150). The melting point and vapor pressure of TDMAS is in a suitable working range; thus making it a very good vapor deposition precursor.

General Description

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InChI:InChI=1/C6H18N3Si/c1-7(2)10(8(3)4)9(5)6/h1-6H3

Upstream product

• 124-40-3 dimethyl amine 
• 10025-78-2 trichlorosilane 
• 75-77-4 chloro-trimethyl-silane 
• 3585-33-9 lithium dimethylamide 
• 13307-05-6 tris(dimethylamino)chlorosilane 
• 598-30-1 sec.-butyllithium 
• 594-19-4 tert.-butyl lithium 

Downstream Products

• 93-89-0 benzoic acid ethyl ester 
• 112926-00-8 silica gel 
• 15235-42-4 Tris (diethylaminoxy) silane 

Related news

Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment07/25/2019

Atomic layer deposition of SiO2 from tris(dimethylamino)silane (TDMAS) and ozone as precursors on Si(100) surfaces at near-room temperatures was studied by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS can be adsorbed at OH sites on hydroxylated Si surfaces...detailed

Non-heating atomic layer deposition of SiO2 using tris(dimethylamino)silane and plasma-excited water vapor07/24/2019

Non-heating atomic layer deposition of SiO2 is developed using tris(dimethylamino)silane (TDMAS) and plasma-excited water vapor. The plasma-excited water is effective in oxidizing the TDMAS-adsorbed SiO2 surface while leaving OH sites on the growing surface at room temperature for further TDMAS ...detailed

Relevant articles and documents

METHOD FOR PRODUCING DIALKYLAMINOSILANE

A method for safely and efficiently producing high-purity dialkylaminosilane. Dialkylamine is fed simultaneously during feeding chlorosilane in the presence of metal to cause reaction. For example, chlorosilane and dialkylamine are fed, and then only dialkylamine is fed to cause reaction, whereby dialkylaminosilane is produced.

Synthetic method for tris(dimethylamino)silane

A synthetic method for tris(dimethylamino)silane is disclosed. The method includes 1) preparing a reaction vessel and feeding protective gas; 2) cooling the reaction vessel to a temperature between -65 DEG C and -75 DEG C, adding a hydrocarbon solvent into the reaction vessel, then adding an organic lithium metal compound and stirring the mixture at a maintained low temperature; 3) feeding dimethylamine gas into the reaction vessel, and stirring the mixture at a maintained low temperature for 8-10 h to prepare a lithium salt of dimethylamine; and 4) while maintaining the low temperature between -65 DEG C and -75 DEG C, adding trichlorosilane to the reaction vessel, after the addition is finished, allowing the mixture to stand to allow the temperature to slowly rise to room temperature, andstirring the mixture for 8-10 h until the reaction is finished; and 5) performing atmospheric-vacuum distillation after the reaction is finished, and collecting a fraction of 75-80 DEG C/5-10 mmHg toobtain the tris(dimethylamino)silane. The cost and reaction toxicity are reduced, operation is simple, and the target compound can be directly obtained without the need of filtration, is high in purity, and meets high requirements of electronic chemicals on product quality.