15112-89-7

Usage

Uses

Used in Thin Film Deposition Industry:
TRIS(DIMETHYLAMINO)SILANE is used as a vapor deposition precursor for the formation of Si oxynitride, carbonitride, nitride, and oxide thin films. It is favored for its ability to deposit these films at low substrate temperatures, making the process more energy-efficient and cost-effective.
Used in Electronics and Optoelectronics Industry:
TRIS(DIMETHYLAMINO)SILANE is used as a material for creating multicomponent silicon-containing thin films, which are essential in the development of electronic and optoelectronic devices. The low-temperature deposition capability of TDMAS allows for the fabrication of high-quality films without damaging sensitive components.
Used in Solar Energy Industry:
In the solar energy sector, TRIS(DIMETHYLAMINO)SILANE is utilized as a precursor for depositing thin-film solar cells, such as silicon-based or other compound semiconductor materials. The low-temperature deposition process is advantageous for producing high-performance solar cells with minimal thermal stress on the substrate.
Used in Chemical Vapor Deposition (CVD) Processes:
TRIS(DIMETHYLAMINO)SILANE is used as a precursor in CVD processes for depositing various types of thin films with precise control over film composition and properties. Its suitable vapor pressure and melting point make it an ideal candidate for CVD applications in various industries, including electronics, optoelectronics, and solar energy.
Please inquire for quantity, pricing, and packaging options to further explore the potential applications and benefits of TRIS(DIMETHYAMINO)SILANE in your specific industry.

InChI:InChI=1/C6H18N3Si/c1-7(2)10(8(3)4)9(5)6/h1-6H3

Upstream product

• 124-40-3 dimethyl amine 
• 3585-33-9 lithium dimethylamide 
• 75-77-4 chloro-trimethyl-silane 
• 10025-78-2 trichlorosilane 
• 13307-05-6 tris(dimethylamino)chlorosilane 
• 598-30-1 sec.-butyllithium 
• 594-19-4 tert.-butyl lithium 

Downstream Products

• 112926-00-8 silica gel 
• 15235-42-4 Tris (diethylaminoxy) silane 
• 93-89-0 benzoic acid ethyl ester 

Related news

Atomic layer deposition of SiO2 from Tris(dimethylamino)silane and ozone by using temperature-controlled water vapor treatment07/25/2019

Atomic layer deposition of SiO2 from tris(dimethylamino)silane (TDMAS) and ozone as precursors on Si(100) surfaces at near-room temperatures was studied by infrared absorption spectroscopy with a multiple internal reflection geometry. TDMAS can be adsorbed at OH sites on hydroxylated Si surfaces...detailed

Non-heating atomic layer deposition of SiO2 using tris(dimethylamino)silane and plasma-excited water vapor07/24/2019

Non-heating atomic layer deposition of SiO2 is developed using tris(dimethylamino)silane (TDMAS) and plasma-excited water vapor. The plasma-excited water is effective in oxidizing the TDMAS-adsorbed SiO2 surface while leaving OH sites on the growing surface at room temperature for further TDMAS ...detailed

Relevant academic research and scientific papers

Method for manufacturing of alkylaminosilane compound

The present invention relates to a method for preparing alkylaminosilane compounds capable of obtaining high purity alkylaminosilane compounds in high yield.

METHOD FOR PRODUCING DIALKYLAMINOSILANE

A method for safely and efficiently producing high-purity dialkylaminosilane. Dialkylamine is fed simultaneously during feeding chlorosilane in the presence of metal to cause reaction. For example, chlorosilane and dialkylamine are fed, and then only dialkylamine is fed to cause reaction, whereby dialkylaminosilane is produced.

Synthetic method for tris(dimethylamino)silane

A synthetic method for tris(dimethylamino)silane is disclosed. The method includes 1) preparing a reaction vessel and feeding protective gas; 2) cooling the reaction vessel to a temperature between -65 DEG C and -75 DEG C, adding a hydrocarbon solvent into the reaction vessel, then adding an organic lithium metal compound and stirring the mixture at a maintained low temperature; 3) feeding dimethylamine gas into the reaction vessel, and stirring the mixture at a maintained low temperature for 8-10 h to prepare a lithium salt of dimethylamine; and 4) while maintaining the low temperature between -65 DEG C and -75 DEG C, adding trichlorosilane to the reaction vessel, after the addition is finished, allowing the mixture to stand to allow the temperature to slowly rise to room temperature, andstirring the mixture for 8-10 h until the reaction is finished; and 5) performing atmospheric-vacuum distillation after the reaction is finished, and collecting a fraction of 75-80 DEG C/5-10 mmHg toobtain the tris(dimethylamino)silane. The cost and reaction toxicity are reduced, operation is simple, and the target compound can be directly obtained without the need of filtration, is high in purity, and meets high requirements of electronic chemicals on product quality.

1,1,1-TRIS(ORGANOAMINO)DISILANE COMPOUNDS AND METHOD OF PREPARING SAME

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

METHOD FOR PRODUCING DIALKYLAMINOSILANE

In a method for synthesizing dialkylaminosilane from a reaction of dialkylamine with chlorosilane as the method for producing dialkylaminosilane, a large amount of dialkylamine hydrochloride is produced as a by-product, in addition to objective dialkylaminosilane. Therefore, upon obtaining objective dialkylaminosilane, reduction of volumetric efficiency caused by a large amount of a solvent is prevented, and dialkylaminosilane is produced at a low cost and in a large amount. Dialkylaminosilane having a small halogen content is produced with high volumetric efficiency by using, as a solvent upon allowing dialkylamine to react with chlorosilane, an aprotic polar solvent having high solubility in dialkylamine hydrochloride and metal chloride each produced as a by-product by the reaction, and straight-chain or branched hydrocarbon having high solubility in dialkylaminosilane and hard to dissolve a halogen compound therein.

PROCESS FOR THE PREPARATION OF TRISALKYLAMINOSILANE

The present invention relates to a method of preparing tris(alkylamino)silane comprising the steps in which: (a) an amine represented by chemical formula of R^1R^2NH is made to react with a halosilane represented by chemical formula of SiH_nX_4-n; and (b) tris(alkylamino)silane, a product of the step (a), is made to react with a metal hydride and converted into tris(alkylamino)silane. In the chemical formulas, R^1 and R^2 each independently represent a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms; n is 0 or 1; X is a fluoro-, chloro-, bromo-, or iodo-group; and the step (a) necessarily includes a compound in which n equals zero. According to the present invention, by using a metal hydride to reduce a tris(alkylamino)silane intermediate, which is a reaction product of amine and halosilane, and thus convert the same into tris(alkylamino)silane, tris(alkylamino)silane can be obtained in a high yield and alkylamine hydrochloride produced as a byproduct can be easily removed, and accordingly, the impurity content in the final product can be reduced to a few ppb or less.COPYRIGHT KIPO 2017

Method for removing compounds having Si-O bond from aminosilanes

The present invention relates to a method for eliminating compounds having an Si-O bond from aminosilane. More specifically, the present invention relates to a method for eliminating compounds having an Si-O bond from aminosilane, which comprises the following steps: treating aminosilane including the compounds having Si-O bond as impurities with alkyl metal so as to transform the impurities into a compound showing large difference in the boiling point from aminosilane; and eliminating the impurities through distillation, thereby simplifying a distillation process and increasing yield of aminosilane.

METHOD FOR PREPARING PURIFIED AMINOSILANE

An object is to provide a highly pure aminosilane having a reduced amount of halogen impurity, which is suitable for applications of electronic materials and others. More specifically, provided is a method for preparing a purified aminosilane comprising at least the steps of treating, with an alkyl metal reagent, an aminosilane having a Si—N bond but not a Si-halogen bond and having halogen impurity content of 1 ppm (w/w) or more; and distilling the treated aminosilane.

Hydride and fluoride transfer reactions accompanying nucleophilic substitution at pentacoordinate silicon

The syntheses of aminoazasilatranes of the type R2NSi(R′NCH2CH2)3N (R′ = H, R = H (2a), CH3 (3a), CH2CH3 (4a), Si(CH3)3 (6a), R′ = CH3, R = H (2b), CH3 (3b), CH2CH3 (4b), Si(CH3)3 (6b) via nucleophilic substitution reactions of ClSi(R′NCH2CH2)3N (R′ = H (7a), R′ = CH3 (7b), respectively) with amide anions are reported. Reactivities of 7a and 7b toward other nucleophilic reagents such as alkyllithiums and Group 1 metal alkoxides are also described. It is found that the equatorial NR′ functionalities significantly influence the reaction pathways. With strong bases, lithiation of the equatorial NH hydrogens of 7a predominated along with some nucleophilic substitution products and hydride transfer product HSi(HNCH2CH2)3N, 1a. With 7b, however, equatorial nitrogen lithiation is precluded and its reaction with nucleophiles can produce substantial amounts of nucleophilic substitution product as well as hydride transfer product HSi(CH3NCH2CH2)3N, 1b. The relative ratios of these products depend substantially on stereoelectronic factors, the nature of the nucleophilic reagents, and the reaction conditions. In the case of the reaction of 7b with BrC6F5/n-BuLi, three products, namely, C6F5Si(CH3NCH2CH2) 3N (13b), FSi(CH3NCH2CH2)3N (14b), and C6F5Si(CH3NCH2CH2) 2(ο-C6F4CH3NCH 2CH2)N (15) formed in an approximate ratio of 1:2:1. The formation of 15 is attributed to perfluorobenzyne insertion into a Si-Neq bond of (13b). Interestingly, the plane defined by the axial NSi2 moiety in 6a is found to be fixed at the apical position of the silicon, providing an interesting example of pπ-dπ interaction between a pentacoordinate silicon and a nitrogen. However, the axial moiety in analogue 6b freely rotates around the apical Si-N bond due to steric interactions with nearby methyl groups on the cage.