Non-heating atomic layer deposition of SiO2 using tris(dimethylamino)silane and plasma-excited water vapor
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Add time:07/24/2019 Source:sciencedirect.com
Non-heating atomic layer deposition of SiO2 is developed using TRIS(DIMETHYLAMINO)SILANE (cas 15112-89-7) (TDMAS) and plasma-excited water vapor. The plasma-excited water is effective in oxidizing the TDMAS-adsorbed SiO2 surface while leaving OH sites on the growing surface at room temperature for further TDMAS adsorption. The growth rate is measured to be 0.075 nm/cycle at room temperature. SiO2 stacking directly on a Ge (100) wafer at room temperature is demonstrated, where an atomically flat interface is confirmed by transmission electron microscope observation.
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