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3117-03-1

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3117-03-1 Usage

Synthesis Reference(s)

Journal of the American Chemical Society, 117, p. 8879, 1995 DOI: 10.1021/ja00139a033

Check Digit Verification of cas no

The CAS Registry Mumber 3117-03-1 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 3,1,1 and 7 respectively; the second part has 2 digits, 0 and 3 respectively.
Calculate Digit Verification of CAS Registry Number 3117-03:
(6*3)+(5*1)+(4*1)+(3*7)+(2*0)+(1*3)=51
51 % 10 = 1
So 3117-03-1 is a valid CAS Registry Number.
InChI:InChI=1/C8H8O4/c1-11-7-3-6(10)8(12-2)4-5(7)9/h3-4H,1-2H3

3117-03-1SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 11, 2017

Revision Date: Aug 11, 2017

1.Identification

1.1 GHS Product identifier

Product name 2,5-dimethoxycyclohexa-2,5-diene-1,4-dione

1.2 Other means of identification

Product number -
Other names 2,5-DIMETHOXY-(1,4)BENZOQUINONE

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:3117-03-1 SDS

3117-03-1Relevant articles and documents

Base-Promoted Reactions of Hydroxyquinones with Pyrones: A Direct and Sustainable Entry to Anthraquinones and Naphthoquinones

Kraus, George A.,Yu, Huangchao

, p. 1840 - 1842 (2019)

Hydroxybenzoquinones and hydroxynaphthoquinones react with methyl coumalate and 5-cyanopyrone to generate anthraquinones and naphthoquinones in good to excellent yields.

COMPOUND FOR HARD MASK, HARD MASK COMPOSITION COMPRISING SAID COMPOUND, AND METHOD FOR FORMING SEMICONDUCTOR ELEMENT FINE PATTERN USING SAID COMPOUND

-

Paragraph 0257-0262, (2020/12/15)

The present invention relates to a compound for a hard mask, a hard mask composition comprising the same, and a method for forming a fine pattern of a semiconductor element using the same. The compound for a hard mask according to the present invention has high solvent solubility that can be applied to a spin coating method, and thus it is possible to prepare a hard mask composition that not onlyhas excellent gap filling performance, but also has excellent heat resistance and etching resistance after curing. In addition, it is possible to provide a fine pattern forming method of a semiconductor element using the same.

Steric effects of bulky tethered arylpiperazines on the reactivity of Co-Schiff base oxidation catalysts—a synthetic and computational study

Key, Rebecca E.,Elder, Thomas,Bozell, Joseph J.

, p. 3118 - 3127 (2019/05/10)

New C2-symmetric and C2-asymmetric Co-Schiff base catalysts tethered to arylpiperazine units were synthesized and used to oxidize phenolic lignin models to para-benzoquinones. Synthetic approaches to these catalysts were optimized to include fewer steps and broaden the types of catalyst structures available. In contrast to conventional Co-Schiff base catalysts, these systems induce phenolic oxidation in the absence of an external axial base, simplifying the process. Asymmetric catalysts bearing a phenylethylene or diphenylmethyl piperazine substituent display the highest catalytic activity observed to date for the conversion of S-models to 2,6-dimethoxybenzoquinone (DMBQ). Computational analysis shows that more reactive catalysts populate conformations that favor oxidation in preference to non-productive decomposition routes. This balance between catalyst reactivity and catalyst deactivation is optimized by inclusion of sufficient steric bulk around the periphery of the Schiff base ligand, reducing catalyst deactivation and allowing oxidations to proceed in the absence of an added axial ligand.

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