Polyhedral oligomeric silsesquioxane (POSS) acrylate copolymers for microfabrication: properties and formulation of resist materials

Add time:07/23/2019    Source:sciencedirect.com

Novel polymers containing polyhedral oligomeric silsesquioxane (POSS) pendant groups have been synthesized and evaluated as components of resist formulations. Random copolymers of polymerizable ethyl-POSS containing monomers with various acrylate type monomers including tert-butyl methacrylate and 2-(trifluoromethyl) acrylic acid, were used in positive, aqueous base-developable resist formulations and evaluated at thicknesses in the range of 100 nm. Copolymers with optimized monomer composition provide materials with good film forming properties, and high sensitivity at 157 nm (1–10 mJ/cm2 under open field exposure). High resolution patterning under these conditions has shown potential for sub 100 nm lithography upon further material optimization. Moreover, pattern transfer studies have shown that 100 nm thick films of POSS containing materials, having ∼9% silicon content provide the necessary oxygen plasma resistance for use as bilayer resists.

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