Structural variations in indium tin tellurides and their thermoelectric properties

Add time:08/01/2019    Source:sciencedirect.com

Indium-doped tin tellurides are promising and thoroughly investigated thermoelectric materials. Due to the low solubility of In2Te3 in SnTe and vice versa, samples with the nominal composition (SnTe)3-3x(In2Te3)x with 0.136 ≤ x ≤ 0.75 consist of a defect-rocksalt-type Sn-rich and a defect-sphalerite-type In-rich phase which are endotaxially intergrown and form nanoscale heterostructures. Such nanostructures are kinetically inert and become more pronounced with increasing overall In content. The vacancies often show short-range ordering. These phenomena are investigated by temperature-dependent X-ray diffraction and HRTEM as well as STEM with element mapping by X-ray spectroscopy. The combination of real-structure effects leads to very low lattice thermal conductivity from room temperature up to 500 °C. Thermoelectric figures of merit ZT of heterostructured materials with x = 0.136 reach ZT values up to 0.55 at 400 °C.

We also recommend Trading Suppliers and Manufacturers of COPPER(I) TELLURIDE (cas 12019-52-2). Pls Click Website Link as below: cas 12019-52-2 suppliers

Prev:Characteristics of pulse plated copper indium telluride films
Next:Iodide-sulfides of dysprosium: Elucidation of the pathway to lanthanide iodide-sulfide-nitride clusters)