Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane (cas 134303-33-6) and germane
-
Add time:07/25/2019 Source:sciencedirect.com
This work investigates the crystal quality of SiGe layers grown at low temperatures using trisilane (cas 134303-33-6), and germane precursors. The crystal quality sensitivity was monitored for hydrogen chloride and/or minor oxygen amount during SiGe epitaxy or at the interface of SiGe/Si layers. The quality of the epi-layers was examined by quantifying noise parameter, K1/f obtained from the power spectral density vs. 1/f curves. The results indicate that while it is difficult to detect small defect densities in SiGe layers by physical material characterization, the noise measurement could reveal the effects of oxygen contamination as low as 0.16 mPa inside and in the interface of the layers.
We also recommend Trading Suppliers and Manufacturers of trisilane (cas 134303-33-6). Pls Click Website Link as below: cas 134303-33-6 suppliers
Prev:Biomimetic transamination of α-keto perfluorocarboxylic esters. An efficient preparative synthesis of β,β,β-trifluoroalanine
Next:Comparison of the inhibitory effects of Tolcapone (cas 134308-13-7) and entacapone against human UDP-glucuronosyltransferases) - 【Back】【Close 】【Print】【Add to favorite 】