Effect of annealing on the structural and optical properties of β-Ga2O3 films prepared on GADOLINIUM GALLIUM GARNET (cas 12024-36-1) (110) by MOCVD

Add time:07/29/2019    Source:sciencedirect.com

Ga2O3 films were deposited on GADOLINIUM GALLIUM GARNET (cas 12024-36-1) (Gd3Ga5O12, or GGG)(110) substrates by the metalorganic chemical vapor deposition (MOCVD) method, followed by a post-deposition thermal annealing at different temperatures. The structural analyses showed that the film annealed at 900 ℃ was pure β-Ga2O3 have the best crystalline quality. A clear epitaxial relationship of β-Ga2O3(100)‖GGG(110) with β-Ga2O3[010]‖GGG[001¯] was determined and a schematic diagram was proposed to clarify the growth mechanism for the 900 ℃-annealed sample. The average transmittance of the sample annealed at 900 ℃ was 84% in the visible wavelength region. A broad ultraviolet-green photoluminescence (PL) band ranged from 330 to 520 nm was observed, for which the PL mechanism was discussed and clarified.

We also recommend Trading Suppliers and Manufacturers of GADOLINIUM GALLIUM GARNET (cas 12024-36-1). Pls Click Website Link as below: cas 12024-36-1 suppliers

Prev:Optical properties of pure and Ce3+ doped GADOLINIUM GALLIUM GARNET (cas 12024-36-1) crystals and epitaxial layers
Next:Crystal growth and morphology of substituted GADOLINIUM GALLIUM GARNET (cas 12024-36-1))