Ytterbium metal-insulator-semiconductor contacts to indium phosphide

Add time:07/27/2019    Source:sciencedirect.com

Yb has been shown to form high quality rectifying contacts to p-InP and linear, low resistance contacts to fn-InP. The Yb-rectifying contacts gave a barrier height of 1.03–1.04 eV by C-V, and ideality factor of 1.25 with a 10 Å interfacial oxide and reverse saturation current density of 2–3 × 10−9A/cm2. As a temperature sensor, the contact gave a sensitivity of 2.4 mV/K with linearity from 100 to 450 K. The low resistance contact to n-InP has a resistance of 0.02 Ω-cm2 on undoped material.

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