PRASEODYMIUM SILICIDE (cas 12066-83-0) formation at the Pr2O3/Si interface
-
Add time:07/28/2019 Source:sciencedirect.com
The interface and layer structure of praseodymium (Pr) oxide layers grown on Si(0 0 1) from a high-temperature effusion cell are studied using grazing incidence X-ray diffraction. Due to the interdiffusion of praseodymium and silicon atoms, Pr silicide forms in the layers. We find that Pr silicide is the favorable structure under oxygen deficient growth conditions in the Pr oxide layer. To avoid the silicidation, additional oxygen must be supplied. The formation of Pr silicide is suppressed for layers grown with an oxygen partial pressure of 10−7 mbar at a substrate temperature of 700 °C.
We also recommend Trading Suppliers and Manufacturers of PRASEODYMIUM SILICIDE (cas 12066-83-0). Pls Click Website Link as below: cas 12066-83-0 suppliers
Prev:Synthesis of η1 and η5 complexes of samarium(II) with benzophospholyl ligands
Next:Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions) - 【Back】【Close 】【Print】【Add to favorite 】
- Related Information
- Praseodymium compound formation in silicon by ion beam synthesis08/05/2019
- Effects of praseodymium doping on thermoelectric transport properties of CaMnO3 compound system08/04/2019
- Effects of the thermal annealing processes on praseodymium oxide based films grown on silicon substrates08/03/2019
- Structural chemistry, magnetism and electrical properties of binary Pr-silicides08/02/2019
- Standard enthalpies of formation of some carbides, silicides and germanides of cerium and praseodymium08/01/2019
- Magnetism and the absence of superconductivity in the praseodymium–silicon system doped with carbon and boron07/31/2019
- Praseodymium based high-k dielectrics grown on Si and SiC substrates07/30/2019
- Chemistry of thin film formation and stability during praseodymium oxide deposition on Si(111) under oxygen-deficient conditions07/29/2019
-
Health and Chemical more >