All-solution-processed high-performance quantum dot light emitting devices employing an inorganic thiocyanate as hole injection layer

Add time:08/02/2019    Source:sciencedirect.com

We report here the all-solution-processed, high-efficiency quantum dot light emitting diode (QLED) employing inorganic copper (I) thiocyanate (CuSCN) as hole injection layer. In comparison with the widely used injection material of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT:PSS), the hole injection into the QD layer is significantly improved, allowing low turn-on voltage, high luminance and efficiency. By optimizing the multilayer structure and synergistically balancing the carrier injection, the resulting QLEDs exhibit high performance with the maximum current efficiency of 52.4 cd/A and external quantum efficiency of 12.0% for green device, 17.0 cd/A and 16.2% for red device. These results indicate that CuSCN is a reliable hole transport materials for low-cost, high-efficiency QLED devices.

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