A rational strategy for improving air-stability of OFETs via electronic tuning of substituents of benzene-fused bis(tetrathiafulvalene)

Add time:07/30/2019    Source:sciencedirect.com

To improve the air-stability of OFETs, several strong electron-withdrawing groups were introduced to both terminals of the benzene-fused bis (tetrathiafulvalene). This strategy indeed brought many useful changes, such as HOMO energies level, packing structure. Their oxidation potentials determined by cyclic voltammetry were shifted cathodically by more than 0.20 eV compared with the alkylthio group substituted analogues. Their solution-processed field-effect transistors showed improved p-type organic semiconductor characteristics. In the experimental study, the best performing device exhibited a hole mobility up to 0.057 cm2 V−1 s−1 under ambient conditions.

We also recommend Trading Suppliers and Manufacturers of (2-Ethylbutyl)benzene (cas 19219-85-3). Pls Click Website Link as below: cas 19219-85-3 suppliers

Prev:Antioxidants and stabilizers: Part CI—A typical impurity contained in an industrial antiozonant, N-(1,3-dimethylbutyl)-N′-phenyl-1,4-phenylenediamine
Next:Secondary interactions in the crystal structures of three 1,2,4,5-tetrakis(bromomethyl)-3,6-bis(2-alkoxy)benzenes)