Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen

Add time:08/12/2019    Source:sciencedirect.com

The effect of the oxygen exposure on ruthenium atomic layer deposition (ALD) was investigated. Ru ALD was carried out using BIS(CYCLOPENTADIENYL)RUTHENIUM (cas 1287-13-4) and oxygen gas. To investigate the effect of the oxygen exposure, the total oxygen exposure was changed by two different ways; change of exposure time at a constant flow and change of flow at a constant exposure time. While the increase in oxygen exposure time did not change the film properties, the increase in the oxygen flow rate resulted in a significant increase in the growth rate and resistivity. The properties of ALD Ru films prepared at different oxygen exposure conditions were analyzed by various techniques including synchrotron radiation X-ray diffraction, X-ray photoelectron spectroscopy, X-ray reflectivity, and transmission electron microscopy. The growth mechanism is discussed based on the analysis results.

We also recommend Trading Suppliers and Manufacturers of BIS(CYCLOPENTADIENYL)RUTHENIUM (cas 1287-13-4). Pls Click Website Link as below: cas 1287-13-4 suppliers

Prev:Polymorphism and thermodynamic properties of chloro(cyclopentadienyl)bis(triphenylphosphine)ruthenium(II) complex
Next:Some reactions of azides with diynyl-bis(phosphine)ruthenium-cyclopentadienyl complexes)