Electronic structure of α-sexithiophene ultrathin films grown on passivated Si(0 0 1) surfaces
-
Add time:07/17/2019 Source:sciencedirect.com
We have investigated the valence electronic states of α-sexithiophene (α-6T) on three passivated Si(0 0 1) surfaces, oxidized Si(0 0 1), water-adsorbed Si(0 0 1) and ethylene-adsorbed Si(0 0 1), using ultraviolet photoelectron spectroscopy (UPS). At a thickness of α-6T layer below 0.5 nm, clear features of the π states are observed for water-adsorbed Si(0 0 1) and ethylene-adsorbed Si(0 0 1), whereas broad features are observed for oxidized Si(0 0 1). This difference is attributed to the formation of well-ordered stacking on water-adsorbed Si(0 0 1) and ethylene-adsorbed Si(0 0 1).
We also recommend Trading Suppliers and Manufacturers of ALPHA-SEXITHIOPHENE (cas 88493-55-4). Pls Click Website Link as below: cas 88493-55-4 suppliers
Prev:The growth of α-sexithiophene films on Ag(111) studied by means of PEEM with linearly polarized light
Next:Properties and crystal structure of perfluoro-α-sexithiophene) - 【Back】【Close 】【Print】【Add to favorite 】
- Related Information
- Polarization energy calculations of charge transfer states in the α-sexithiophene crystal07/20/2019
- Role of kinetic energy of impinging molecules in the α-sexithiophene growth07/21/2019
- Electronic properties of the interface between the organic semiconductor α-sexithiophene and polycrystalline palladium07/19/2019
- Properties and crystal structure of perfluoro-α-sexithiophene07/18/2019
- The growth of α-sexithiophene films on Ag(111) studied by means of PEEM with linearly polarized light07/16/2019
- Orientation management of α-sexithiophene layer for the application in organic photovoltaic devices07/15/2019
- Polarized emission from ultra-thin α-sexithiophene layers on oriented β-phase polyfluorene films07/14/2019
- Growth of α-sexithiophene nanostructures on C60 thin film layers07/13/2019
- Temperature controlled interlayer disorder in ultrathin films of α-sexithiophene07/12/2019
