Full length articleAn investigation of thin Zn films on 4H-SiC(0001)graphene

Add time:08/15/2019    Source:sciencedirect.com

In this work, the growth of thin Zn films on 4H-SiC(0001)graphene and the effects of system annealing at various temperatures are presented. Metal growth on graphene is interesting to understand the grown morphology and metal intercalation, to use it to tune graphene properties. The properties such as chemical composition and surface structure were studied for deposited films and after annealing from 640 K to 1080 K. Using X-ray Photoelectron Spectroscopy and Low Energy Electron Diffraction techniques it was found that zinc interacts weakly with the substrate and does not change the XPS spectra bond energies but it intercalates, as seen from the extinction of the 6 × 6 diffraction spots. Moreover, in order to obtain complementary results, Density Functional Theory calculations were performed. The theoretical results for adsorption energy of Zn at various types of SiC surfaces can explain the preferred adsorption sites and the decrease of adsorption energy with Zn coverage presented in the experimental results.

We also recommend Trading Suppliers and Manufacturers of (S)-4-ETHYL-4-HYDROXY-7,8-DIHYDRO-1H-PYRANO[3,4-F]INDOLIZINE-3,6,10(4H)-TRIONE (cas 110351-94-5). Pls Click Website Link as below: cas 110351-94-5 suppliers

Prev:Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers
Next:Research articleComparison of subcutaneously administered soluble insulin and des-(B26–B30)-insulin-B25-amide in rabbit, pig and healthy man☆)